FDS4141 ,-40V P-Channel PowerTrench?MOSFETGeneral Description Max r = 13.0mΩ at V = -10V, I = -10.5A This P-Channel MOSFET has been produced ..
FDS4141 ,-40V P-Channel PowerTrench?MOSFETApplications Control switch in synchronous & non-synchronous buck Load switch InverterDDD 5 G4DD ..
FDS4141_F085 ,P-Channel PowerTrench?MOSFET -40V, -10.8A, 19.0m?Features Control switch in synchronous & non-synchronous buck Typ r = 10.5mΩ at V = -10V, I = -10 ..
FDS4410 ,Single N-Channel Logic Level PWM Optimized PowerTrench TM MOSFETGeneral Description MOSFETN-Channel Logic Level PWM Optimized PowerTrenchSingle DS441 F O( TAV ..
FDS4410_NL ,Single N-Channel Logic Level PWM Optimized PowerTrench MOSFETGeneral Description MOSFETN-Channel Logic Level PWM Optimized PowerTrenchSingle DS441 F O( TAV ..
FDS4410A ,Single N-Channel, Logic-Level, PowerTrench® MOSFET®FDS4410A Single N-Channel, Logic-Level, PowerTrench MOSFET ..
FQB6P25 ,250V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect -6.0A, -250V, R = 1.1Ω @V = -10 VDS(o ..
FQB6P25TM ,250V P-Channel QFETFeaturesThese P-Channel enhancement mode power field effect -6.0A, -250V, R = 1.1Ω @V = -10 VDS(o ..
FQB70N08 ,80V N-Channel MOSFETapplications such as automotive, highefficiency switching for DC/DC converters, and DC motorcontrol ..
FQB70N08TM ,80V N-Channel QFETapplications such as automotive, highefficiency switching for DC/DC converters, and DC motorcontrol ..
FQB70N10 ,100V N-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQB7N10 ,100V N-Channel MOSFETapplications such as audioamplifiers, high efficiency switching DC/DC converters, andDC motor contr ..
FDS4141
-40V P-Channel PowerTrench?MOSFET
® FDS4141 P-Channel PowerTrench MOSFET November 2007 FDS4141 ® P-Channel PowerTrench MOSFET -40V, -10.8A, 13.0mΩ Features General Description Max r = 13.0mΩ at V = -10V, I = -10.5A This P-Channel MOSFET has been produced using Fairchild DS(on) GS D ® Semiconductor’s proprietary PowerTrench technology to Max r = 19.0mΩ at V = -4.5V, I = -8.4A DS(on) GS D deliver low r and optimized BV capability to offer DS(on) DSS High performance trench technology for extremely low r superior performance benefit in the applications and optimized DS(on) switching performance capability reducing power dissipation RoHS Compliant losses in converter/inverter applications. Applications Control switch in synchronous & non-synchronous buck Load switch Inverter D D D 5 G 4 D D D 6 S 3 D 2 S 7 G SO-8 S D 8 S 1 S Pin 1 S MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage -40 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous -10.8 I A D -Pulsed -36 E Single Pulse Avalanche Energy (Note 3) 294 mJ AS Power Dissipation T = 25°C (Note 1a) 5 A P W D Power Dissipation T = 25°C (Note 1b) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case (Note 1) 25 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDS4141 FDS4141 SO-8 13’’ 12mm 2500units 1 ©2007 FDS4141 Rev.C
