FDS4141_F085 ,P-Channel PowerTrench?MOSFET -40V, -10.8A, 19.0m?Features Control switch in synchronous & non-synchronous buck Typ r = 10.5mΩ at V = -10V, I = -10 ..
FDS4410 ,Single N-Channel Logic Level PWM Optimized PowerTrench TM MOSFETGeneral Description MOSFETN-Channel Logic Level PWM Optimized PowerTrenchSingle DS441 F O( TAV ..
FDS4410_NL ,Single N-Channel Logic Level PWM Optimized PowerTrench MOSFETGeneral Description MOSFETN-Channel Logic Level PWM Optimized PowerTrenchSingle DS441 F O( TAV ..
FDS4410A ,Single N-Channel, Logic-Level, PowerTrench® MOSFET®FDS4410A Single N-Channel, Logic-Level, PowerTrench MOSFET ..
FDS4410A ,Single N-Channel, Logic-Level, PowerTrench® MOSFETapplications where low in-line power loss and fastR DS(ON)switching are required. High power and cu ..
FDS4410A ,Single N-Channel, Logic-Level, PowerTrench® MOSFETGeneral Description 10 A, 30 V. R = 13.5 mΩ @ V = 10 V This N-Channel Logic Level MOSFET is produce ..
FQB6P25 ,250V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect -6.0A, -250V, R = 1.1Ω @V = -10 VDS(o ..
FQB6P25TM ,250V P-Channel QFETFeaturesThese P-Channel enhancement mode power field effect -6.0A, -250V, R = 1.1Ω @V = -10 VDS(o ..
FQB70N08 ,80V N-Channel MOSFETapplications such as automotive, highefficiency switching for DC/DC converters, and DC motorcontrol ..
FQB70N08TM ,80V N-Channel QFETapplications such as automotive, highefficiency switching for DC/DC converters, and DC motorcontrol ..
FQB70N10 ,100V N-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQB7N10 ,100V N-Channel MOSFETapplications such as audioamplifiers, high efficiency switching DC/DC converters, andDC motor contr ..
FDS4141_F085
P-Channel PowerTrench?MOSFET -40V, -10.8A, 19.0m?
® FDS4141_F085 P-Channel PowerTrench MOSFET May 2009 FDS4141_F085 ® P-Channel PowerTrench MOSFET -40V, -10.8A, 19.0mΩ Applications Features Control switch in synchronous & non-synchronous buck Typ r = 10.5mΩ at V = -10V, I = -10.5A DS(on) GS D Load switch Typ r = 14.8mΩ at V = -4.5V, I = -8.4A DS(on) GS D Inverter Typ Q = 35nC at V = -10V g(TOT) GS High performance trench technology for extremely low r DS(on) RoHS Compliant Qualified to AEC Q101 D D D 5 4 G D D S 6 3 D D S 7 2 G SO-8 S D 8 S 1 S Pin 1 S ©2009 1 FDS4141_F085 Rev. A