FDS4080N3 ,40V N-Channel Bottomless TM PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FDS4080N3 ,40V N-Channel Bottomless TM PowerTrench MOSFETApplications • Fast switching (Qg = 30 nC ) • Synchronous rectifier • DC/DC converter • Bottomless ..
FDS4080N7 ,40V N-Channel Bottomless PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FDS4141 ,-40V P-Channel PowerTrench?MOSFETGeneral Description Max r = 13.0mΩ at V = -10V, I = -10.5A This P-Channel MOSFET has been produced ..
FDS4141 ,-40V P-Channel PowerTrench?MOSFETApplications Control switch in synchronous & non-synchronous buck Load switch InverterDDD 5 G4DD ..
FDS4141_F085 ,P-Channel PowerTrench?MOSFET -40V, -10.8A, 19.0m?Features Control switch in synchronous & non-synchronous buck Typ r = 10.5mΩ at V = -10V, I = -10 ..
FQB6N70TM ,700V N-Channel QFET
FQB6N80 ,800V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 5.8A, 800V, R = 1.95Ω @V = 10 VDS(on) ..
FQB6P25 ,250V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect -6.0A, -250V, R = 1.1Ω @V = -10 VDS(o ..
FQB6P25TM ,250V P-Channel QFETFeaturesThese P-Channel enhancement mode power field effect -6.0A, -250V, R = 1.1Ω @V = -10 VDS(o ..
FQB70N08 ,80V N-Channel MOSFETapplications such as automotive, highefficiency switching for DC/DC converters, and DC motorcontrol ..
FQB70N08TM ,80V N-Channel QFETapplications such as automotive, highefficiency switching for DC/DC converters, and DC motorcontrol ..
FDS4080N3
40V N-Channel Bottomless TM PowerTrench MOSFET
FDS4080N3 June 2002 FDS4080N3 40V N-Channel Bottomless™ PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 13 A, 40 V R = 10.5 mΩ @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for • High performance trench technology for extremely “low side” synchronous rectifier operation, providing an low R DS(ON) extremely low R in a small package. DS(ON) • High power and current handling capability Applications • Fast switching (Qg = 30 nC ) • Synchronous rectifier • DC/DC converter • Bottomless� SO-8 package: Enhanced thermal performance in industry-standard package size Bottom-side D NC Drain Contact D 5 4 NC D NC D NC 6 3 D 7 2 Bottomless G G S SO-8 S S 8 1 S S Pin 1SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 40 V DSS VGSS Gate-Source Voltage ± 20 V I Drain Current – Continuous (Note 1a) 13 A D – Pulsed 60 P Power Dissipation for Single Operation (Note 1a) 3.9 W D TJ, TSTG Operating and Storage Junction Temperature Range –55 to +175 °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 40 R °C/W θJA Thermal Resistance, Junction-to-Ambient 0.5 RθJC °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS4080N3 FDS4080N3 13’’ 12mm 2500 units FDS4080N3 Rev B(W) 2002
