FDS4070N7 ,40V N-Channel PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FDS4072N3 ,40V N-Channel PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FDS4080N3 ,40V N-Channel Bottomless TM PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FDS4080N3 ,40V N-Channel Bottomless TM PowerTrench MOSFETApplications • Fast switching (Qg = 30 nC ) • Synchronous rectifier • DC/DC converter • Bottomless ..
FDS4080N7 ,40V N-Channel Bottomless PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FDS4141 ,-40V P-Channel PowerTrench?MOSFETGeneral Description Max r = 13.0mΩ at V = -10V, I = -10.5A This P-Channel MOSFET has been produced ..
FQB6N60TM ,600V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect 6.2A, 600V, R = 1.5Ω @V = 10 VDS(on) ..
FQB6N70TM ,700V N-Channel QFET
FQB6N80 ,800V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 5.8A, 800V, R = 1.95Ω @V = 10 VDS(on) ..
FQB6P25 ,250V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect -6.0A, -250V, R = 1.1Ω @V = -10 VDS(o ..
FQB6P25TM ,250V P-Channel QFETFeaturesThese P-Channel enhancement mode power field effect -6.0A, -250V, R = 1.1Ω @V = -10 VDS(o ..
FQB70N08 ,80V N-Channel MOSFETapplications such as automotive, highefficiency switching for DC/DC converters, and DC motorcontrol ..
FDS4070N7
40V N-Channel PowerTrench MOSFET
FDS4070N7 April 2002 FDS4070N7 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 15.3 A, 40 V. R = 7 mΩ @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional • High performance trench technology for extremely switching PWM controllers. It has been optimized for low R DS(ON) “low side” synchronous rectifier operation, providing an extremely low R in a small package. DS(ON) • High power and current handling capability Applications • Fast switching, low gate charge • Synchronous rectifier • Bottomless� SO-8 package: Enhanced thermal • DC/DC converter performance in industry-standard package size Bottom-side D Drain Contact D S 5 4 DS DS 6 3 S D 7 2 Bottomless G G 8 1 S SO-8 S S S S Pin 1 SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 40 V DSS V Gate-Source Voltage ± 20 V GSS I Drain Current – Continuous (Note 1a) 15.3 A D – Pulsed 60 Maximum Power Dissipation (Note 1a) 3.0 P W D T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 40 θJA °C/W R Thermal Resistance, Junction-to-Case (Note 1) 0.5 θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS4070N7 FDS4070N7 13’’ 12mm 2500 units FDS4070N7 Rev B (W) 2002
