FDS3890 ,80V N-Channel Dual PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed 4.7 A, 80 V. R = 44 mΩ @ V = 10 V DS(ON) GSspecifi ..
FDS3992 ,N-Channel PowerTrench ?MOSFET 100V, 4.5A, 62mOhmFDS3992August 2002FDS3992®N-Channel PowerTrench MOSFET100V, 4.5A, 62mΩ
FDS4070N3 ,40V N-Channel PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FDS4070N3 ,40V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 15.3 A, 40 V. R = 7.5 mΩ @ V = 10 V DS(ON) GSs ..
FDS4070N7 ,40V N-Channel PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FDS4072N3 ,40V N-Channel PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FQB6N40 ,400V N-Channel MOSFET
FQB6N40C ,400V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 6A, 400V, R = 1.0 Ω @V = 10 VDS(on) ..
FQB6N40CTM ,400V N-Channel Advance Q-FET C-SeriesFQB6N40C/FQI6N40C TMQFETFQB6N40C/FQI6N40C400V N-Channel MOSFET
FQB6N45 ,450V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 6.2A, 450V, R = 1.1Ω @V = 10 VDS(on) ..
FQB6N50 ,500V N-Channel MOSFET
FQB6N50TM ,500V N-Channel QFET
FDS3890
80V N-Channel Dual PowerTrench MOSFET
FDS3890 February 2001 FDS3890 80V N-Channel Dual PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 4.7 A, 80 V. R = 44 mΩ @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 50 mΩ @ V = 6 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. • Fast switching speed These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable • High performance trench technology for extremely R specifications. The result is a MOSFET that is DS(ON) low R DS(ON) easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall • High power and current handling capability efficiency. D1 5 4 D1 D2 Q1 6 3 D2 7 2 Q2 G1 8 1 S1 SO-8 G2 S2 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 80 V DSS V Gate-Source Voltage ± 20 V GSS I Drain Current – Continuous (Note 1a) 4.7 A D – Pulsed 20 Power Dissipation for Dual Operation 2 P W D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1.0 (Note 1c) 0.9 T , T Operating and Storage Junction Temperature Range –55 to +175 °C J STG Thermal Characteristics °C/W R Thermal Resistance, Junction-to-Ambient (Note 1a) 78 θJA °C/W R Thermal Resistance, Junction-to-Case (Note 1) 40 θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS3890 FDS3890 13’’ 12mm 2500 units FDS3890 Rev B(W) 2001
