FDS3692 ,Discrete Commercial N-Channel UltraFET Trench MOSFET, 100V, 4.5A, 0.060 Ohm @ Vgs = 10V, SO-8 PackageFDS3692September 2002FDS3692®N-Channel PowerTrench MOSFET100V, 4.5A, 60mΩ
FDS3812 ,80V N-Channel Dual PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed 3.4 A, 80 V. R = 74 mΩ @ V = 10 V DS(ON) GSspecifi ..
FDS3890 ,80V N-Channel Dual PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed 4.7 A, 80 V. R = 44 mΩ @ V = 10 V DS(ON) GSspecifi ..
FDS3992 ,N-Channel PowerTrench ?MOSFET 100V, 4.5A, 62mOhmFDS3992August 2002FDS3992®N-Channel PowerTrench MOSFET100V, 4.5A, 62mΩ
FDS4070N3 ,40V N-Channel PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FDS4070N3 ,40V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 15.3 A, 40 V. R = 7.5 mΩ @ V = 10 V DS(ON) GSs ..
FQB630 ,200V N-Channel MOSFET
FQB65N06 ,60V N-Channel MOSFETapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FQB65N06TM ,60V N-Channel QFET Mosfetapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FQB6N40 ,400V N-Channel MOSFET
FQB6N40C ,400V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 6A, 400V, R = 1.0 Ω @V = 10 VDS(on) ..
FQB6N40CTM ,400V N-Channel Advance Q-FET C-SeriesFQB6N40C/FQI6N40C TMQFETFQB6N40C/FQI6N40C400V N-Channel MOSFET
FDS3692
Discrete Commercial N-Channel UltraFET Trench MOSFET, 100V, 4.5A, 0.060 Ohm @ Vgs = 10V, SO-8 Package
FDS3692 September 2002 FDS3692 ® N-Channel PowerTrench MOSFET 100V, 4.5A, 60mΩ Features Applications r = 50mΩ (Typ.), V = 10V, I = 4.5A DC/DC converters and Off-Line UPS DS(ON) GS D Q (tot) = 11nC (Typ.), V = 10V g GS Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low Q Body Diode RR High Voltage Synchronous Rectifier Optimized efficiency at high frequencies Direct Injection / Diesel Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) 42V Automotive Load Control Formerly developmental type 82745Electronic Valve Train Systems Branding Dash 5 4 6 3 5 1 7 2 2 3 8 1 4 SO-8 MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 100 V DSS V Gate to Source Voltage ±20 V GS Drain Current o o 4.5 A Continuous (T = 25 C, V = 10V, R = 50 C/W) A GS θJA I D o o Continuous (T = 100 C, V = 10V, R = 50C/W) 2.8 A A GS θJA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 1) 171 mJ AS Power dissipation 2.5 W P D o o Derate above 25C20mW/ C o T , T Operating and Storage Temperature -55 to 150 C J STG Thermal Characteristics o R Thermal Resistance, Junction to Ambient at 10 seconds (Note 3) 50 C/W θJA o R Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3) 85 C/W θJA o R Thermal Resistance, Junction to Case (Note 2) 25 C/W θJC Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDS3692 FDS3692 SO-8 330mm 12mm 2500 units ©2002 FDS3692 Rev. B
