FDS3682 ,N-Channel PowerTrench ?MOSFETApplicationsr = 30mΩ (Typ.), V = 10V, I = 6A DC/DC converters and Off-Line UPSDS(ON) GS DQ (tot ..
FDS3682 ,N-Channel PowerTrench ?MOSFETFDS3682July 2002FDS3682®N-Channel PowerTrench MOSFET100V, 6A, 35mΩ
FDS3690 ,100V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed• 4.2 A, 100 V. R = 64 mΩ @ V = 10 VDS(ON) GSspecifi ..
FDS3690 ,100V N-Channel PowerTrench MOSFETApplications• DC/DC converter• Motor DriverD5 4DD6D 37 2GS18SSO-8 SoAbsolute Maximum Ratings ..
FDS3692 ,Discrete Commercial N-Channel UltraFET Trench MOSFET, 100V, 4.5A, 0.060 Ohm @ Vgs = 10V, SO-8 PackageFDS3692September 2002FDS3692®N-Channel PowerTrench MOSFET100V, 4.5A, 60mΩ
FDS3812 ,80V N-Channel Dual PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed 3.4 A, 80 V. R = 74 mΩ @ V = 10 V DS(ON) GSspecifi ..
FQB60N03L ,30V LOGIC N-Channel MOSFETapplications such as DC/DCconverters, high efficiency switching for powermanagement in portable and ..
FQB60N03L ,30V LOGIC N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 60A, 30V, R = 0.0135Ω @V = 10 VDS(on) ..
FQB630 ,200V N-Channel MOSFET
FQB65N06 ,60V N-Channel MOSFETapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FQB65N06TM ,60V N-Channel QFET Mosfetapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FQB6N40 ,400V N-Channel MOSFET
FDS3682
N-Channel PowerTrench ?MOSFET
FDS3682 July 2002 FDS3682 ® N-Channel PowerTrench MOSFET 100V, 6A, 35mΩ Features Applications r = 30mΩ (Typ.), V = 10V, I = 6A DC/DC converters and Off-Line UPS DS(ON) GS D Q (tot) = 19nC (Typ.), V = 10V g GS Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low Q Body Diode rr High Voltage Synchronous Rectifier Optimized efficiency at high frequencies Direct Injection / Diesel Injection System UIS Capability (Single Pulse and Repetitive Pulse) 42V Automotive Load Control Formerly developmental type 82755Electronic Valve Train System Branding Dash 5 4 6 3 5 1 7 2 2 3 8 1 4 SO-8 MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 100 V DSS V Gate to Source Voltage ±20 V GS Drain Current o o 6.0 A Continuous (T = 25 C, V = 10V, R = 50 C/W) A GS θJA I D o o Continuous (T = 100 C, V = 10V, R = 50C/W) 3.7 A A GS θJA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 1) 156 mJ AS Power dissipation 2.5 W P D o o Derate above 25C20mW/ C o T , T Operating and Storage Temperature -55 to 150 C J STG Thermal Characteristics o R Thermal Resistance, Junction to Ambient at 10 seconds (Note 3) 50 C/W θJA o R Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3) 80 C/W θJA o R Thermal Resistance, Junction to Case (Note 2) 25 C/W θJC Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDS3682 FDS3682 SO-8 330mm 12mm 2500 units ©2002 FDS3682 Rev. A
