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FDS3590N/a53avai80V N-Channel PowerTrench?MOSFET


FDS3590 ,80V N-Channel PowerTrench?MOSFETFeaturesThis N-Channel MOSFET has been designed• 6.5 A, 80 V R = 39 mΩ @ V = 10 VDS(ON) GSspecifica ..
FDS3601 ,100V Dual N-Channel PowerTrench MOSFETFeaturesThese N-Channel MOSFETs have been designed• 1.3 A, 100 V. R = 480 mΩ @ V = 10 VDS(ON) GSsp ..
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FDS3590
80V N-Channel PowerTrench?MOSFET
FDS3590 November 2000 FDS3590 80V N-Channel PowerTrench® MOSFET General Description Features This N-Channel MOSFET has been designed • 6.5 A, 80 V R = 39 mΩ @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC RDS(ON) = 44 mΩ @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. • Low gate charge These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable • Fast switching speed R specifications. DS(ON) • High performance trench technology for extremely The result is a MOSFET that is easy and safer to drive low RDS(ON) (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. • High power and current handling capability D D 5 4 D 6 3 D 7 2 G S 1 8 S SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 80 V DSS VGSS Gate-Source Voltage ±20 V I Drain Current – Continuous (Note 1a) 6.5 A D – Pulsed 50 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1.0 T , T Operating and Storage Junction Temperature -55 to +150 J STG °C Range Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W θJA Thermal Resistance, Junction-to-Case (Note 1) 25 R °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS3590 FDS3590 13’’ 12mm 2500 units FDS3590 Rev C (W)  2000
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