FDS3580 ,80V N-Channel PowerTrench MOSFETFeatures• 7.6 A, 80 V. R = 0.029 Ω @ V = 10 VThis N-Channel MOSFET has been designed specificallyDS ..
FDS3580 ,80V N-Channel PowerTrench MOSFETFDS3580December 2000FDS3580 80V N-Channel PowerTrench MOSFET
FDS3590 ,80V N-Channel PowerTrench?MOSFETFeaturesThis N-Channel MOSFET has been designed• 6.5 A, 80 V R = 39 mΩ @ V = 10 VDS(ON) GSspecifica ..
FDS3601 ,100V Dual N-Channel PowerTrench MOSFETFeaturesThese N-Channel MOSFETs have been designed• 1.3 A, 100 V. R = 480 mΩ @ V = 10 VDS(ON) GSsp ..
FDS3601_NL ,100V Dual N-Channel PowerTrench MOSFETFeaturesThese N-Channel MOSFETs have been designed• 1.3 A, 100 V. R = 480 mΩ @ V = 10 VDS(ON) GSsp ..
FDS3612 ,100V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 3.4 A, 100 V. R = 120 mΩ @ V = 10 V DS(ON) GSspe ..
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FDS3580
80V N-Channel PowerTrench MOSFET
FDS3580 December 2000 FDS3580 80V N-Channel PowerTrench MOSFET General Description Features • 7.6 A, 80 V. R = 0.029 Ω @ V = 10 V This N-Channel MOSFET has been designed specifically DS(ON) GS to improve the overall efficiency of DC/DC converters using R = 0.033 Ω @ V = 6 V. DS(ON) GS either synchronous or conventional switching PWM controllers. • Low gate charge (34nC typical). These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R • Fast switching speed. DS(ON) specifications. • High performance trench technology for extremely low R . The result is a MOSFET that is easy and safer to drive DS(ON) (even at very high frequencies), and DC/DC power supply • High power and current handling capability. designs with higher overall efficiency. D D 5 4 D D 6 3 7 2 G S 1 8 S SO-8 S T = 25°C unless otherwise noted Absolute Maximum Ratings A Symbol Parameter Ratings Units V Drain-Source Voltage 80 V DSS V Gate-Source Voltage 20 V GSS ± I Drain Current - Continuous (Note 1a) 7.6 A D - Pulsed 50 (Note 1a) P Power Dissipation for Single Operation 2.5 W D (Note 1b) 1.2 (Note 1c) 1 T , T Operating and Storage Junction Temperature Range -55 to +150 C J stg ° Thermal Characteristics (Note 1a) R Thermal Resistance, Junction-to-Ambient 50 C/W JA ° θ R Thermal Resistance, Junction-to-Case (Note 1) 25 C/W JC ° θ Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDS3580 FDS3580 13’’ 12mm 2500 units 2000 Fairchild Semiconductor International FDS3580 Rev. C
