FDS3572 ,80V N-Channel PowerTrench MOSFETApplicationsr = 14mΩ (Typ.), V = 10V, I = 8.9A Primary switch for Isolated DC/DC converters DS(O ..
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FDS3572
80V N-Channel PowerTrench MOSFET
FDS3572 November 2003 FDS3572 ® N-Channel PowerTrench MOSFET 80V, 8.9A, 16mΩ Features Applications r = 14mΩ (Typ.), V = 10V, I = 8.9A Primary switch for Isolated DC/DC converters DS(ON) GS D Q = 31nC (Typ.), V = 10V g(tot) GS Distributed Power and Intermediate Bus Architectures Low Miller Charge High Voltage Synchronous Rectifier for DC Bus Low Q Body Diode Converters RR Optimized efficiency at high frequencies UIS Capability (Single Pulse and Repetitive Pulse) Formerly developmental type 82663 Branding Dash 5 4 6 3 5 1 7 2 2 3 8 1 4 SO-8 MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 80 V DSS V Gate to Source Voltage ±20 V GS Drain Current o o 8.9 A Continuous (T = 25 C, V = 10V, R = 50 C/W) A GS θJA I D o o Continuous (T = 100 C, V = 10V, R = 50C/W) 5.6 A A GS θJA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 1) 515 mJ AS Power dissipation 2.5 W P D o o Derate above 25C20mW/ C o T , T Operating and Storage Temperature -55 to 150 C J STG Thermal Characteristics o R Thermal Resistance, Junction to Case (Note 2) 25 C/W θJC o Thermal Resistance, Junction to Ambient at 10 seconds (Note 3) 50 C/W R θJA o R Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3) 85 C/W θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDS3572 FDS3572 SO-8 330mm 12mm 2500 units ©2003 FDS3572 Rev. A
