FDS3512 ,80V N-Channel PowerTrench ?MOSFETFeatures This N-Channel MOSFET has been designed • 4.0 A, 80 V R = 70 mΩ @ V = 10 V DS(ON) GSspecif ..
FDS3512 ,80V N-Channel PowerTrench ?MOSFETFeatures This N-Channel MOSFET has been designed • 4.0 A, 80 V R = 70 mΩ @ V = 10 V DS(ON) GSspecif ..
FDS3512 ,80V N-Channel PowerTrench ?MOSFETFDS3512 May 2001 FDS3512 ®80V N-Channel PowerTrench MOSFET
FDS3572 ,80V N-Channel PowerTrench MOSFETApplicationsr = 14mΩ (Typ.), V = 10V, I = 8.9A Primary switch for Isolated DC/DC converters DS(O ..
FDS3572 ,80V N-Channel PowerTrench MOSFETFDS3572November 2003FDS3572®N-Channel PowerTrench MOSFET80V, 8.9A, 16mΩ
FDS3580 ,80V N-Channel PowerTrench MOSFETFeatures• 7.6 A, 80 V. R = 0.029 Ω @ V = 10 VThis N-Channel MOSFET has been designed specificallyDS ..
FQB4N50 ,500V N-Channel MOSFET
FQB4N50TM ,500V N-Channel QFET
FQB4N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 4.4A, 600V, R = 2.2Ω @V = 10 VDS(on) ..
FQB4N80 ,800V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 3.9A, 800V, R = 3.6Ω @V = 10 VDS(on) ..
FQB4N90TM ,900V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect • 4.2A, 900V, R = 3.3 Ω @ V = 10 VDS(on ..
FQB4P25 ,250V P-Channel MOSFET
FDS3512
80V N-Channel PowerTrench ?MOSFET
FDS3512 May 2001 FDS3512 ® 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 4.0 A, 80 V R = 70 mΩ @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC RDS(ON) = 80 mΩ @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. • Low gate charge (13nC Typical) These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable • Fast switching speed R specifications. DS(ON) • High performance trench technology for extremely The result is a MOSFET that is easy and safer to drive low RDS(ON) (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. • High power and current handling capability D D 5 4 D 6 3 D 7 2 G S 1 8 S SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 80 V DSS VGSS Gate-Source Voltage ±20 V I Drain Current – Continuous (Note 1a) 4.0 A D – Pulsed 30 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1.0 T , T Operating and Storage Junction Temperature Range –55 to +175 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 50 R °C/W θJA R Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS3512 FDS3512 13’’ 12mm 2500 units FDS3512 Rev B1 (W) 2001
