FDS3170N7 ,100V N-Channel PowerTrench MOSFETApplications • High power and current handling capability • Synchronous rectifier • Fast switching, ..
FDS3170N7 ,100V N-Channel PowerTrench MOSFETApplications • High power and current handling capability • Synchronous rectifier • Fast switching, ..
FDS3170N7 ,100V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 6.7 A, 100 V. R = 26 mΩ @ V = 10 V DS(ON) GSspe ..
FDS3170N7 ,100V N-Channel PowerTrench MOSFETFDS3170N7 May 2003 FDS3170N7 100V N-Channel PowerTrench MOSFET
FDS3512 ,80V N-Channel PowerTrench ?MOSFETFeatures This N-Channel MOSFET has been designed • 4.0 A, 80 V R = 70 mΩ @ V = 10 V DS(ON) GSspecif ..
FDS3512 ,80V N-Channel PowerTrench ?MOSFETFeatures This N-Channel MOSFET has been designed • 4.0 A, 80 V R = 70 mΩ @ V = 10 V DS(ON) GSspecif ..
FQB4N20 ,200V N-Channel MOSFET
FQB4N20L ,200V LOGIC N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 3.8A, 200V, R = 1.35Ω @V = 10 VDS(on) ..
FQB4N20LTM ,200V N-Channel Logic Level QFETFQB4N20L / FQI4N20LDecember 2000TMQFET QFET QFET QFETFQB4N20L / FQI4N20L200V LOGIC N-Channel MOSFET
FQB4N20LTM ,200V N-Channel Logic Level QFETFeaturesThese N-Channel enhancement mode power field effect 3.8A, 200V, R = 1.35Ω @V = 10 VDS(on) ..
FQB4N20TM ,200V N-Channel QFET
FQB4N20TM ,200V N-Channel QFET
FDS3170N7
100V N-Channel PowerTrench MOSFET
FDS3170N7 May 2003 FDS3170N7 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 6.7 A, 100 V. R = 26 mΩ @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 28 mΩ @ V = 6.0 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for • High performance trench technology for extremely “low side” synchronous rectifier operation, providing an extremely low R in a small package. DS(ON) low R DS(ON) Applications • High power and current handling capability • Synchronous rectifier • Fast switching, low gate charge • DC/DC converter • FLMP SO-8 package: Enhanced thermal performance in industry-standard package size Bottom-side Drain Contact 5 4 6 3 7 2 8 1 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 100 V DSS V Gate-Source Voltage V GSS ± 20 I Drain Current – Continuous (Note 1a) 6.7 A D – Pulsed 60 P Power Dissipation for Single Operation (Note 1a) 3.0 W D T , T Operating and Storage Junction Temperature Range –55 to +150 J STG °C Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W θJA Thermal Resistance, Junction-to-Case (Note 1) 0.5 R °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS3170N7 FDS3170N7 13’’ 12mm 2500 units FDS3170N7 Rev C1(W) 2003
