FDS2672 ,200V N-Channel UltraFET Trench MOSFETGeneral Description Max r = 70mΩ at V = 10V, I = 3.9A This single N-Channel MOSFET is produced usi ..
FDS2672 ,200V N-Channel UltraFET Trench MOSFET®FDS2672 N-Channel UltraFET Trench MOSFETAugust 2006FDS2672 ..
FDS2672_F085 ,200V N-Channel UltraFET Trench MOSFETGeneral Description Max r = 70mΩ at V = 10V, I = 3.9A This single N-Channel MOSFET is produced usi ..
FDS3170N7 ,100V N-Channel PowerTrench MOSFETApplications • High power and current handling capability • Synchronous rectifier • Fast switching, ..
FDS3170N7 ,100V N-Channel PowerTrench MOSFETApplications • High power and current handling capability • Synchronous rectifier • Fast switching, ..
FDS3170N7 ,100V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 6.7 A, 100 V. R = 26 mΩ @ V = 10 V DS(ON) GSspe ..
FQB3P20 ,200V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect -2.8A, -200V, R = 2.7Ω @V = -10 VDS(o ..
FQB3P20TM ,200V P-Channel QFETFeaturesThese P-Channel enhancement mode power field effect -2.8A, -200V, R = 2.7Ω @V = -10 VDS(o ..
FQB3P20TM ,200V P-Channel QFETApril 2000TMQFET QFET QFET QFETFQB3P20 / FQI3P20200V P-Channel MOSFET
FQB3P50 ,500V P-Channel MOSFETAugust 2000TMQFET QFET QFET QFETFQB3P50 / FQI3P50500V P-Channel MOSFET
FQB3P50TM ,500V P-Channel QFETGeneral DescriptionThese P-Channel enhancement mode power field effect
FQB44N08 ,80V N-Channel MOSFETapplications such as automotive, highefficiency switching for DC/DC converters, and DC motorcontrol ..
FDS2672
200V N-Channel UltraFET Trench MOSFET
® FDS2672 N-Channel UltraFET Trench MOSFET August 2006 FDS2672 tm ® N-Channel UltraFET Trench MOSFET 200V, 3.9A, 70mΩ Features General Description Max r = 70mΩ at V = 10V, I = 3.9A This single N-Channel MOSFET is produced using DS(on) GS D ® Fairchild Semiconductor’s advanced UItraFET Trench Max r = 80mΩ at V = 6V, I = 3.5A process that has been especially tailored to minimize DS(on) GS D the on-state resistance and yet maintain superior switching Fast switching speed performance. High performance trench technology for extremely low Application r DS(on) DC-DC conversion RoHS compliant D D 5 4 D D 6 3 SO-8 7 2 G S 8 1 S S Pin 1 MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 200 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Note 1a) 3.9 I A D -Pulsed 50 E Single Pulse Avalanche Energy (Note 3) 37.5 mJ AS Power Dissipation (Note 1a) 2.5 P W D Power Dissipation (Note 1b) 1.0 T , T Operating and Storage Temperature -55 to 150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case (Note 1) 25 θJC R Thermal Resistance, Junction to Ambient (Note 1a) 50 °C/W θJA R Thermal Resistance, Junction to Ambient (Note 1b) 125 θJA Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDS2672 FDS2672 13’’ 12mm 2500 units ©2006 1 FDS2672 Rev. B
