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FDS2672_F085
200V N-Channel UltraFET Trench MOSFET
® FDS2672_F085 N-Channel UltraFET Trench MOSFET February 2010 FDS2672_F085 tm ® N-Channel UltraFET Trench MOSFET 200V, 3.9A, 70mΩ Features General Description Max r = 70mΩ at V = 10V, I = 3.9A This single N-Channel MOSFET is produced using DS(on) GS D ® Fairchild Semiconductor’s advanced UItraFET Trench Max r = 80mΩ at V = 6V, I = 3.5A process that has been especially tailored to minimize DS(on) GS D the on-state resistance and yet maintain superior switching Fast switching speed performance. High performance trench technology for extremely low Application r DS(on) DC-DC conversion Qualified to AEC Q101 RoHS compliant D D 5 4 D D 6 3 SO-8 7 2 G S 8 1 S S Pin 1 MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 200 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Note 1a) 3.9 I A D -Pulsed 50 E Single Pulse Avalanche Energy (Note 3) 37.5 mJ AS Power Dissipation (Note 1a) 2.5 P W D Power Dissipation (Note 1b) 1.0 T , T Operating and Storage Temperature -55 to 150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case (Note 1) 25 θJC R Thermal Resistance, Junction to Ambient (Note 1a) 50 °C/W θJA R Thermal Resistance, Junction to Ambient (Note 1b) 125 θJA Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDS2672 FDS2672_F085 13’’ 12mm 2500 units ©2010 1 FDS2672_F085 Rev. A
