FDS2670 ,200V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed• 3.0 A, 200 V. R = 130 mΩ @ V = 10 VDS(ON) GSspecif ..
FDS2672 ,200V N-Channel UltraFET Trench MOSFETGeneral Description Max r = 70mΩ at V = 10V, I = 3.9A This single N-Channel MOSFET is produced usi ..
FDS2672 ,200V N-Channel UltraFET Trench MOSFET®FDS2672 N-Channel UltraFET Trench MOSFETAugust 2006FDS2672 ..
FDS2672_F085 ,200V N-Channel UltraFET Trench MOSFETGeneral Description Max r = 70mΩ at V = 10V, I = 3.9A This single N-Channel MOSFET is produced usi ..
FDS3170N7 ,100V N-Channel PowerTrench MOSFETApplications • High power and current handling capability • Synchronous rectifier • Fast switching, ..
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FQB3N80 ,800V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 3.0A, 800V, R = 5.0Ω @V = 10 VDS(on) ..
FQB3N80TM ,800V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect 3.0A, 800V, R = 5.0Ω @V = 10 VDS(on) ..
FQB3N80TM ,800V N-Channel QFETSeptember 2000TMQFETFQB3N80 / FQI3N80800V N-Channel MOSFET
FQB3N90TM ,900V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect 3.6A, 900V, R = 4.25 Ω @ V = 10 VDS(o ..
FQB3P20 ,200V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect -2.8A, -200V, R = 2.7Ω @V = -10 VDS(o ..
FQB3P20TM ,200V P-Channel QFETFeaturesThese P-Channel enhancement mode power field effect -2.8A, -200V, R = 2.7Ω @V = -10 VDS(o ..
FDS2670
200V N-Channel PowerTrench MOSFET
FDS2670 August 2001 FDS2670 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 3.0 A, 200 V. R = 130 mΩ @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional • Low gate charge switching PWM controllers. • Fast switching speed These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS specifications. • High performance trench technology for extremely (ON) low R DS(ON) The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power • High power and current handling capability supply designs with higher overall efficiency. D D 5 4 D D 6 3 2 7 G S 8 1 S SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 200 V DSS V Gate-Source Voltage V GSS ±20 I Drain Current – Continuous (Note 1a) 3.0 A D – Pulsed 20 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1.0 dv/dt Peak Diode Recovery dv/dt (Note 3) 3.2 V/ns T , T Operating and Storage Junction Temperature Range −55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W θJA Thermal Resistance, Junction-to-Ambient (Note 1c) 125 R °C/W θJA Thermal Resistance, Junction-to-Case (Note 1) 25 R °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS2670 FDS2670 13’’ 12mm 2500 units 2001 FDS2670 Rev C1(W)
