FDS2582 ,Discrete Commercial N-Channel UltraFET TRENCH MOSFET, 150V, 4.5A, 0.060 Ohm @ Vgs = 10V, SO-8 PackageFDS2582September 2002FDS2582®N-Channel PowerTrench MOSFET150V, 4.1A, 66mΩ
FDS2670 ,200V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed• 3.0 A, 200 V. R = 130 mΩ @ V = 10 VDS(ON) GSspecif ..
FDS2672 ,200V N-Channel UltraFET Trench MOSFETGeneral Description Max r = 70mΩ at V = 10V, I = 3.9A This single N-Channel MOSFET is produced usi ..
FDS2672 ,200V N-Channel UltraFET Trench MOSFET®FDS2672 N-Channel UltraFET Trench MOSFETAugust 2006FDS2672 ..
FDS2672_F085 ,200V N-Channel UltraFET Trench MOSFETGeneral Description Max r = 70mΩ at V = 10V, I = 3.9A This single N-Channel MOSFET is produced usi ..
FDS3170N7 ,100V N-Channel PowerTrench MOSFETApplications • High power and current handling capability • Synchronous rectifier • Fast switching, ..
FQB3N30TM ,300V N-Channel QFET
FQB3N40 ,400V N-Channel MOSFET
FQB3N40TM ,400V N-Channel QFET
FQB3N40TM ,400V N-Channel QFET
FQB3N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 3.0A, 600V, R = 3.6Ω @V = 10 VDS(on) ..
FQB3N80 ,800V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 3.0A, 800V, R = 5.0Ω @V = 10 VDS(on) ..
FDS2582
Discrete Commercial N-Channel UltraFET TRENCH MOSFET, 150V, 4.5A, 0.060 Ohm @ Vgs = 10V, SO-8 Package
FDS2582 September 2002 FDS2582 ® N-Channel PowerTrench MOSFET 150V, 4.1A, 66mΩ Features Applications r = 57mΩ (Typ.), V = 10V, I = 4.1A DC/DC converters and Off-Line UPS DS(ON) GS D Q (tot) = 19nC (Typ.), V = 10V g GS Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low Q Body Diode RR High Voltage Synchronous Rectifier Optimized efficiency at high frequencies Direct Injection / Diesel Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) 42V Automotive Load Control Formerly developmental type 82855Electronic Valve Train Systems Branding Dash 5 4 6 3 5 1 7 2 2 3 8 1 4 SO-8 MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 150 V DSS V Gate to Source Voltage ±20 V GS Drain Current o o 4.1 A Continuous (T = 25 C, V = 10V, R = 50 C/W) A GS θJA I D o o Continuous (T = 100 C, V = 10V, R = 50C/W) 2.6 A A GS θJA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 1) 252 mJ AS Power dissipation 2.5 W P D o o Derate above 25C20mW/ C o T , T Operating and Storage Temperature -55 to 150 C J STG Thermal Characteristics o R Thermal Resistance, Junction to Ambient at 10 seconds (Note 3) 50 C/W θJA o R Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3) 80 C/W θJA o R Thermal Resistance, Junction to Case (Note 2) 25 C/W θJC Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDS2582 FDS2582 SO-8 330mm 12mm 2500 units ©2002 FDS2582 Rev. B
