FDS2572 ,150V, 0.047 Ohms, 4.9A, N-Channel UltraFET ?Trench MOSFETFeatures®UltraFET devices combine characteristics that enable • R = 0.040W (Typ.), V = 10V DS(ON) ..
FDS2582 ,Discrete Commercial N-Channel UltraFET TRENCH MOSFET, 150V, 4.5A, 0.060 Ohm @ Vgs = 10V, SO-8 PackageFDS2582September 2002FDS2582®N-Channel PowerTrench MOSFET150V, 4.1A, 66mΩ
FDS2670 ,200V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed• 3.0 A, 200 V. R = 130 mΩ @ V = 10 VDS(ON) GSspecif ..
FDS2672 ,200V N-Channel UltraFET Trench MOSFETGeneral Description Max r = 70mΩ at V = 10V, I = 3.9A This single N-Channel MOSFET is produced usi ..
FDS2672 ,200V N-Channel UltraFET Trench MOSFET®FDS2672 N-Channel UltraFET Trench MOSFETAugust 2006FDS2672 ..
FDS2672_F085 ,200V N-Channel UltraFET Trench MOSFETGeneral Description Max r = 70mΩ at V = 10V, I = 3.9A This single N-Channel MOSFET is produced usi ..
FQB34P10 ,100V P-Channel QFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQB34P10TM ,100V P-Channel QFETFeaturesThese P-Channel enhancement mode power field effect -33.5A, -100V, R = 0.06Ω @V = -10 VDS ..
FQB3N25 ,250V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 2.8A, 250V, R = 2.2Ω @V = 10 VDS(on) ..
FQB3N25TM ,250V N-Channel QFETNovember 2000TMQFET QFET QFET QFETFQB3N25 / FQI3N25250V N-Channel MOSFET
FQB3N30 ,300V N-Channel MOSFET
FQB3N30TM ,300V N-Channel QFET
FDS2572
150V, 0.047 Ohms, 4.9A, N-Channel UltraFET ?Trench MOSFET
FDS2572 October 2001 FDS2572 ® 150V, 0.047 Ohms, 4.9A, N-Channel UltraFET Trench MOSFET General Description Features ® UltraFET devices combine characteristics that enable • R = 0.040W (Typ.), V = 10V DS(ON) GS benchmark efficiency in power conversion applications. • Q = 29nC (Typ.), V = 10V g(TOT) GS Optimized for Rds(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to • Low Q Body Diode RR DC converters. • Maximized efficiency at high frequencies Applications • UIS Rated • DC/DC converters • Telecom and Data-Com Distributed Power Architectures • 48-volt I/P Half-Bridge/Full-Bridge • 24-volt Forward and Push-Pull topologies DD 5 4 DD D D 6 3 D D 7 2 SO-8 G G S S S S 8 1 S Pin 1SO-8 S MOSFET Maximum Ratings T =25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 150 V DSS V Gate to Source Voltage ±20 V GS Drain Current o o 4.9 A Continuous (T = 25 C, V = 10V, R = 50 C/W) C GS qJA I D o o Continuous (T = 100 C, V = 10V, R = 50 C/W) 3.1 A C GS qJA Pulsed Figure 4 A Power dissipation 2.5 W P D o o Derate above 25 C 20 mW/ C o T , T Operating and Storage Temperature -55 to 150 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case (NOTE1) 25 C/W qJC o R Thermal Resistance Junction to Case at 10 seconds (NOTE2) 50 C/W qJA o R Thermal Resistance Junction to Case at steady state (NOTE2) 85 C/W qJA Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDS2572 FDS2572 330mm 12mm 2500units ©2001 FDS2572 Rev. B, October 2001
