FDS2170N7 ,200V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 3.0 A, 200 V. R = 128 mΩ @ V = 10 V DS(ON) GSs ..
FDS2570 ,150V N-Channel PowerTrench MOSFETFDS2570February 2001FDS2570 150V N-Channel PowerTrench MOSFET
FDS2570 ,150V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed• 4A, 150 V. R = 80 mΩ @ V = 10 VDS(ON) GSspecifical ..
FDS2572 ,150V, 0.047 Ohms, 4.9A, N-Channel UltraFET ?Trench MOSFETFeatures®UltraFET devices combine characteristics that enable • R = 0.040W (Typ.), V = 10V DS(ON) ..
FDS2582 ,Discrete Commercial N-Channel UltraFET TRENCH MOSFET, 150V, 4.5A, 0.060 Ohm @ Vgs = 10V, SO-8 PackageFDS2582September 2002FDS2582®N-Channel PowerTrench MOSFET150V, 4.1A, 66mΩ
FDS2670 ,200V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed• 3.0 A, 200 V. R = 130 mΩ @ V = 10 VDS(ON) GSspecif ..
FQB2N90 ,900V N-Channel MOSFET
FQB2N90TM ,900V N-Channel QFET
FQB2NA90 ,900V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 2.8A, 900V, R = 5.8 Ω @ V = 10 VDS(on ..
FQB2NA90TM ,900V N-Channel QFETSeptember 2000TMQFET QFET QFET QFETFQB2NA90 / FQI2NA90900V N-Channel MOSFET
FQB2NA90TM ,900V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect 2.8A, 900V, R = 5.8 Ω @ V = 10 VDS(on ..
FQB2P25 ,250V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect -2.3A, -250V, R = 4.0Ω @V = -10 VDS(o ..
FDS2170N7
200V N-Channel PowerTrench MOSFET
FDS2170N7 June 2002 FDS2170N7 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 3.0 A, 200 V. R = 128 mΩ @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional • High performance trench technology for extremely switching PWM controllers. It has been optimized for low R DS(ON) “low side” synchronous rectifier operation, providing an extremely low R in a small package. DS(ON) • High power and current handling capability Applications • Fast switching, low gate charge (26nC typical) • Synchronous rectifier • Bottomless� SO-8 package: Enhanced thermal • DC/DC converter performance in industry-standard package size Bottom-side Drain Contact 5 4 6 3 7 2 SO-8 Bottomless 8 1 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 200 V DSS V Gate-Source Voltage ± 20 V GSS I Drain Current – Continuous (Note 1a) 3.0 A D – Pulsed 20 Power Dissipation for Single Operation (Note 1a) 3.0 P W D (Note 1b) 1.8 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W θJA R Thermal Resistance, Junction-to-Case (Note 1) 0.5 θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS2170N7 FDS2170N7 13’’ 12mm 2500 units FDS2170N7 Rev C1(W) 2002
