FDS2070N7 ,150V N-Channel PowerTrench MOSFETApplications • High power and current handling capability • Synchronous rectifier • Fast switching, ..
FDS2170N3 ,200V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 3.0 A, 200 V. R = 128 mΩ @ V = 10 V DS(ON) GSs ..
FDS2170N3 ,200V N-Channel PowerTrench MOSFETApplications • Fast switching, low gate charge (26nC typical) • Synchronous rectifier • Bottomless ..
FDS2170N7 ,200V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 3.0 A, 200 V. R = 128 mΩ @ V = 10 V DS(ON) GSs ..
FDS2570 ,150V N-Channel PowerTrench MOSFETFDS2570February 2001FDS2570 150V N-Channel PowerTrench MOSFET
FDS2570 ,150V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed• 4A, 150 V. R = 80 mΩ @ V = 10 VDS(ON) GSspecifical ..
FQB2N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 2.4A, 600V, R = 4.7Ω @V = 10 VDS(on) ..
FQB2N60TM ,600V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect 2.4A, 600V, R = 4.7Ω @V = 10 VDS(on) ..
FQB2N80 ,800V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 2.4A, 800V, R = 6.3Ω @V = 10 VDS(on) ..
FQB2N80TM ,800V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect 2.4A, 800V, R = 6.3Ω @V = 10 VDS(on) ..
FQB2N90 ,900V N-Channel MOSFET
FQB2N90TM ,900V N-Channel QFET
FDS2070N7
150V N-Channel PowerTrench MOSFET
FDS2070N7 June 2002 FDS2070N7 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 4.1 A, 150 V. R = 78 mΩ @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 88 mΩ @ V = 6.0 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for • High performance trench technology for extremely “low side” synchronous rectifier operation, providing an extremely low R in a small package. low R DS(ON) DS(ON) Applications • High power and current handling capability • Synchronous rectifier • Fast switching, low gate charge (38nC typical) • DC/DC converter • Bottomless� SO-8 package: Enhanced thermal performance in industry-standard package size Bottom-side Drain Contact 5 4 6 3 7 2 SO-8 Bottomless 8 1 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 150 V DSS VGSS Gate-Source Voltage ± 20 V I Drain Current – Continuous (Note 1a) 4.1 A D – Pulsed 30 Power Dissipation for Single Operation (Note 1a) 3.0 PD W (Note 1b) 1.8 T , T Operating and Storage Junction Temperature Range –55 to +150 J STG °C Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W θJA Thermal Resistance, Junction-to-Case (Note 1) 0.5 R θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS2070N7 FDS2070N7 13’’ 12mm 2500 units FDS2070N7 Rev C1(W) 2002 Fairchild Semiconductor International
