FDR8702H ,20V N & P-Channel PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions Q Min ..
FDR8702H ,20V N & P-Channel PowerTrench MOSFETApplications • Fast switching speed. DC/DC converter Power management • High performance trench te ..
FDS2070N3 ,150V N-Channel PowerTrench MOSFETApplications • High power and current handling capability • Synchronous rectifier • Fast switching, ..
FDS2070N7 ,150V N-Channel PowerTrench MOSFETApplications • High power and current handling capability • Synchronous rectifier • Fast switching, ..
FDS2170N3 ,200V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 3.0 A, 200 V. R = 128 mΩ @ V = 10 V DS(ON) GSs ..
FDS2170N3 ,200V N-Channel PowerTrench MOSFETApplications • Fast switching, low gate charge (26nC typical) • Synchronous rectifier • Bottomless ..
FQB20N06TM ,60V N-Channel QFETapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FQB22P10 ,100V P-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQB22P10 ,100V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect • -22A, -100V, R = 0.125Ω @V = -10 VDS( ..
FQB22P10TM ,100V P-Channel QFETFQB22P10 / FQI22P10TMQFETFQB22P10 / FQI22P10100V P-Channel MOSFET
FQB22P10TM ,100V P-Channel QFETFeaturesThese P-Channel enhancement mode power field effect • -22A, -100V, R = 0.125Ω @V = -10 VDS( ..
FQB24N08 ,80V N-Channel MOSFETapplications such as automotive, highefficiency switching for DC/DC converters, and DC motorcontrol ..
FDR8702H
20V N & P-Channel PowerTrench MOSFET
FDR8702H March 2003 FDR8702H 20V N & P-Channel PowerTrench MOSFET General Description Features These N & P-Channel MOSFETs are produced • N channel R = 38 mΩ @ V = 4.5 V DS(ON) GS using Fairchild Semiconductor’s advanced 3.6 A, 20V R = 54 mΩ @ V = 2.5 V DS(ON) GS PowerTrench process that has been especially tailored to minimize on-state resistance and yet • P channel R = 80 mΩ @ V = –4.5 V DS(ON) GS maintain superior switching performance. –2.6 A, –20V R = 110 mΩ @ V = –2.5 V DS(ON) GS Applications • Fast switching speed. DC/DC converter Power management • High performance trench technology for extremely low R DS(ON) Q2(P Q2(P) ) 4 5 5 4 D D 3 6 6 3 D D Q1(N Q1(N) ) 7 7 22 1 S2 8 8 1 G2 TM S1 G1 SuperSOT -8 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units Q1 (N) Q2 (P) V Drain-Source Voltage 20 –20 V DSS V Gate-Source Voltage ±12 ±8 V GSS I Drain Current– Continuous (Note 1a) 3.6 –2.6 A D – Pulsed 15 –10 P Power Dissipation for Single Operation (Note 1a) 0.8 D W T , T Operating and Storage Junction Temperature Range –55 to +150 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 146 R °C/W θJA (Note 1b) 76 R Thermal Resistance, Junction-to-Case (Note 1) 40 θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .8702 FDR8702H 13’’ 12mm 2500 units FDR8702H Rev C (W) 2003 Fairchild Semiconductor Corp.
