FDR8521L ,P-Channel MOSFET With Gate Driver For Load Switch ApplicationElectrical Characteristics A Symbol Parameter Test Conditions Min Typ Max UnitsOFF Characteristics ..
FDR8521L ,P-Channel MOSFET With Gate Driver For Load Switch ApplicationApplications • High density cell design for extremely low on-resistance.• Power management• Load sw ..
FDR858P ,Single P-Channel, Logic Level, PowerTrench TM MOSFETGeneral Description MOSFET, Logic Level, PowerTrenchSingle58P O
FDR8702H ,20V N & P-Channel PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions Q Min ..
FDR8702H ,20V N & P-Channel PowerTrench MOSFETApplications • Fast switching speed. DC/DC converter Power management • High performance trench te ..
FDS2070N3 ,150V N-Channel PowerTrench MOSFETApplications • High power and current handling capability • Synchronous rectifier • Fast switching, ..
FQB19N20TM ,200V N-Channel QFET
FQB1N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 1.2A, 600V, R = 11.5Ω @V = 10 VDS(on) ..
FQB1N60TM ,600V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect 1.2A, 600V, R = 11.5Ω @V = 10 VDS(on) ..
FQB1P50TM ,500V P-Channel QFETFQB1P50 / FQI1P50December 2000TMQFET QFET QFET QFETFQB1P50 / FQI1P50500V P-Channel MOSFET
FQB20N06 ,60V N-Channel MOSFETapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FQB20N06L ,60V LOGIC N-Channel MOSFETapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FDR8521L
P-Channel MOSFET With Gate Driver For Load Switch Application
FDR8521L August 2000 FDR8521L P-Channel MOSFET With Gate Driver For Load Switch Application General Description Features This device is designed for configuration as a load switch • V = 0.07 V @ V = 12 V, I = 1 A.R = 0.07 Ω (ON) DROP IN L and is particularly suited for power management in por- V = 0.115 V @ V = 5 V, I = 1 A.R = 0.115 Ω. (ON) DROP IN L table battery powered electronic equipment. Designed to operate from 3V to 20V input and supply up to 2.9A, the • V = 0.2 V @ V = 12 V, I =2.9 A.R = 0.07 Ω (ON) DROP IN L device features a small N-Channel MOSFET (Q1) together V = 0.2 V @ V = 5 V,I = 1.8 A.R = 0.115 Ω. (ON) DROP IN L with a large P-Channel Power MOSFET (Q2) in a single SO-8 package. • Control MOSFET (Q1) includes Zener protection for ESD ruggedness (>6kV Human Body Model). Applications • High density cell design for extremely low on-resistance. • Power management • Load switch VOU T,C1,CO 4 VIN,R1,Ci 5 Q2 EQUIVALENT CIRCUIT VOU T,C1,CO 6 R1,R2,C1 3 V DR OP + - Q1 OUT IN 2 C1,CO 7 R2 R2 VON/OFF 8 1 ON/OFF pin 1 TM SuperSOT -8 See Application Circuit o TA=25 C unless otherwise noted Absolute Maximum Ratings Symbol Parameter Ratings Units V Input Voltage Range (Note 1) 3 - 20 V IN V On/Off Voltage Range 2.5 - 8 V ON/OFF I Load Current - Continuous (Note 2) 2.9 A D - Pulsed 8 (Note 2) PD Maximum Power Dissipation 0.8 W T , T Operating and Storage Temperature Range -55 to +150 C J stg ° ESD Electrostatic Discharge Rating MIL-STD-883D 6kV Human-Body-Model (100pf/1500 Ohm) Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 2) 156 C/W JA ° θ R Thermal Resistance, Junction-to-Case (Note 2) 40 C/W JC ° θ Package Marking and Ordering Information Quantity Device Marking Device Reel Size Tape width 8521L FDR8521L 13’’ 12mm 3000 units 2000 Fairchild Semiconductor International FDR8521L Rev. C