FDR840P ,P-Channel 2.5V Specified PowerTrench MOSFETFeaturesThis P-Channel 2.5V specified MOSFET uses a rugged• –10 A, –20 V. R = 12 mΩ @ V = –4.5 VDS( ..
FDR842P ,P-Channel 1.8V Specified PowerTrench MOSFETFeatures This P-Channel –1.8V specified MOSFET uses • –11 A, –12 V R = 9 mΩ @ V = –4.5 V DS(ON) ..
FDR8508P ,Dual P-Channel, Logic Level, PowerTrench TM MOSFET ..
FDR8521L ,P-Channel MOSFET With Gate Driver For Load Switch ApplicationElectrical Characteristics A Symbol Parameter Test Conditions Min Typ Max UnitsOFF Characteristics ..
FDR8521L ,P-Channel MOSFET With Gate Driver For Load Switch ApplicationApplications • High density cell design for extremely low on-resistance.• Power management• Load sw ..
FDR858P ,Single P-Channel, Logic Level, PowerTrench TM MOSFETGeneral Description MOSFET, Logic Level, PowerTrenchSingle58P O
FQB16N25TM ,250V N-Channel QFET
FQB17N08 ,80V N-Channel MOSFETapplications such as automotive,high efficiency switching for DC/DC converters, and DCmotor contro ..
FQB17N08L ,80V LOGIC N-Channel MOSFETapplications such as automotive, Low level gate drive requirements allowinghigh efficiency switchi ..
FQB17N08TM ,80V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect 16.5A, 80V, R = 0.115Ω @V = 10 VDS(on ..
FQB17P06 ,60V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect • -17A, -60V, R = 0.12Ω @V = -10 VDS(on ..
FQB17P10TM ,100V P-Channel QFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FDR840P
P-Channel 2.5V Specified PowerTrench MOSFET
FDR840P December 2000 FDR840P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged • –10 A, –20 V. R = 12 mΩ @ V = –4.5 V DS(ON) GS gate PowerTrench process. It has been optimized for R = 17.5 mΩ @ V = –2.5 V DS(ON) GS power management applications with a wide range of gate drive voltage (2.5V – 12V). • Fast switching speed. Applications • High performance trench technology for extremely • Power management low R DS(ON) • Load switch • High power and current handling capability • Battery protection S D 5 4 D S 6 3 7 2 G D 8 1 TM D SuperSOT -8 D o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –20 V DSS V Gate-Source Voltage V GSS ± 12 I Drain Current – Continuous (Note 1a) –10 A D – Pulsed –50 Power Dissipation for Single Operation (Note 1a) 1.8 P W D (Note 1b) 1.0 (Note 1c) 0.9 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics °C/W R Thermal Resistance, Junction-to-Ambient (Note 1a) 70 θJA (Note 1) °C/W R Thermal Resistance, Junction-to-Case 20 θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDR840P FDR840P 13’’ 12mm 2500 units FDR840P Rev C1(W) 2001
