FDR836P ,P-Channel 2.5V Specified MOSFETFeaturesTM SuperSOT -8 P-Channel enhancement mode power -6.1 A, -20 V. R = 0.030 W @ V = -4.5 VOND ..
FDR838P ,P-Channel 2.5V Specified PowerTrench TM MOSFETGeneral DescriptionThese P-Channel 2.5V specified MOSFETs are produced• -8 A, -20 V. R = 0.017 Ω @ ..
FDR838P_NL ,P-Channel 2.5V Specified PowerTrench MOSFETApplications• High performance trench technology for extremely• Load switch low R .DS(ON)• Mo ..
FDR840P ,P-Channel 2.5V Specified PowerTrench MOSFETFeaturesThis P-Channel 2.5V specified MOSFET uses a rugged• –10 A, –20 V. R = 12 mΩ @ V = –4.5 VDS( ..
FDR842P ,P-Channel 1.8V Specified PowerTrench MOSFETFeatures This P-Channel –1.8V specified MOSFET uses • –11 A, –12 V R = 9 mΩ @ V = –4.5 V DS(ON) ..
FDR8508P ,Dual P-Channel, Logic Level, PowerTrench TM MOSFET ..
FQB14N30TM ,300V N-Channel QFET
FQB14N30TM ,300V N-Channel QFET
FQB15P12 ,120V P-Channel QFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQB16N15TM ,150V N-Channel QFET
FQB16N25 ,250V N-Channel MOSFET
FQB16N25C ,250V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect • 15.6A, 250V, R = 0.27Ω @V = 10 VDS(on ..
FDR8321L
P-Channel MOSFET With Gate Driver For Load Switch Application
THERMAL CHARACTERISTICS
