FDR8305N ,Dual N-Channel 2.5V Specified PowerTrench MOSFETApplications• Load switch High performance trench technology for extremely Motor driving lo ..
FDR8308P ,Dual P-Channel, Logic Level, PowerTrench TM MOSFETElectrical Characteristics (T = 25 C unless otherwise noted )AV Vo oI C CΔ / ΔTJI V V µ AT µ AI VI ..
FDR8321L ,P-Channel MOSFET With Gate Driver For Load Switch ApplicationGeneral DescriptionMOSFET With Gate Driver For Load Switch Application21 (TAI V 5 V 1 µ A )V V V V ..
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FDR838P_NL ,P-Channel 2.5V Specified PowerTrench MOSFETApplications• High performance trench technology for extremely• Load switch low R .DS(ON)• Mo ..
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FQB15P12 ,120V P-Channel QFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
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FDR8305N
Dual N-Channel 2.5V Specified PowerTrench MOSFET
FDR8305N November 1999 FDR8305N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced 4.5 A, 20 V. R = 0.022 Ω @ V = 4.5 V DS(ON) GS using Fairchild Semiconductor's advanced PowerTrench R = 0.028 Ω @ V = 2.5 V. process that has been especially tailored to minimize the DS(ON) GS on-state resistance and yet maintain low gate charge for superior switching performance.Low gate charge (16.2nC typical). Fast switching speed. Applications • Load switch High performance trench technology for extremely Motor driving low R . DS(ON) Power Management Small footprint (38% smaller than a standard SO-8);low profile package (1 mm thick); power handling capability similar to SO-8. D2 D2 4 5 D1 D1 6 3 2 7 S2 G2 S1 8 1 G1 TM SuperSOT -8 Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units VDSS Drain-Source Voltage 20 V V Gate-Source Voltage V GSS ±8 I Drain Current - Continuous (Note 1a) 4.5 A D - Pulsed 20 (Note 1a) PD Power Dissipation for Single Operation 0.8 W T , T Operating and Storage Junction Temperature Range -55 to +150 J stg °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 156 ° R JA C/W θ (Note 1) R Thermal Resistance, Junction-to-Case 40 °C/W JC θ Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity .8305 FDR8305N 13’’ 12mm 3000 units 1999 FDR8305N Rev. C
