FDR6674A ,30V N-Channel PowerTrench MOSFETApplications • High power and current handling capability in a smaller footprint than SO8 • Synchro ..
FDR6674A ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 11.5 A, 30 V. R = 9.5 mΩ @ V = 4.5 V DS(ON) GS ..
FDR6678A ,30V N-Channel PowerTrench MOSFETApplications • High power and current in a smaller footprint than • DC/DC converter SO-8 SD5 4DS6 ..
FDR8305N ,Dual N-Channel 2.5V Specified PowerTrench MOSFETApplications• Load switch High performance trench technology for extremely Motor driving lo ..
FDR8308P ,Dual P-Channel, Logic Level, PowerTrench TM MOSFETElectrical Characteristics (T = 25 C unless otherwise noted )AV Vo oI C CΔ / ΔTJI V V µ AT µ AI VI ..
FDR8321L ,P-Channel MOSFET With Gate Driver For Load Switch ApplicationGeneral DescriptionMOSFET With Gate Driver For Load Switch Application21 (TAI V 5 V 1 µ A )V V V V ..
FQB13N06TM ,60V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect • 13A, 60V, R = 0.135Ω @V = 10 VDS(on) ..
FQB13N10LTM ,100V N-Channel Logic Level QFETapplications such as highefficiency switching DC/DC converters, and DC motorcontrol.D D! !""!!""""G ..
FQB13N10TM ,100V N-Channel QFETapplications such as audioamplifier, high efficiency switching DC/DC converters, andDC motor contro ..
FQB13N50C ,500V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 13A, 500V, R = 0.48Ω @V = 10 VDS(on) ..
FQB13N50CTM ,500V N-Channel Advance Q-FET C-SeriesFQB13N50C/FQI13N50C TMQFETFQB13N50C/FQI13N50C500V N-Channel MOSFET
FQB140N03L ,30V LOGIC N-Channel MOSFETapplications such as DC/DCconverters, high efficiency switching for powermanagement in portable and ..
FDR6674A
30V N-Channel PowerTrench MOSFET
FDR6674A April 2001 FDR6674A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 11.5 A, 30 V. R = 9.5 mΩ @ V = 4.5 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 8.5 mΩ @ V = 10 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for • High performance trench technology for extremely “low side” synchronous rectifier operation, providing an extremely low R in a small package. low R DS(ON) DS(ON) Applications • High power and current handling capability in a smaller footprint than SO8 • Synchronous rectifier • DC/DC converter S D 5 4 D S 6 3 7 2 G D 8 1 TM D SuperSOT -8 D o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±12 V GSS I Drain Current – Continuous (Note 1a) 11.5 A D – Pulsed 50 Power Dissipation for Single Operation (Note 1a) 1.8 P W D (Note 1b) 1.0 (Note 1c) 0.9 T , T Operating and Storage Junction Temperature Range -55 to +150 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 70 R °C/W θJA Thermal Resistance, Junction-to-Case (Note 1) 20 RθJC °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .6674A FDR6674A 13’’ 12mm 2500 units FDR6674A Rev D(W) 2000
