FDR4420A ,Single N-Channel, Logic Level, PowerTrench TM MOSFETElectrical Characteristics (T = 25 C unless otherwise noted )ASymbol Parameter Conditions Min Typ ..
FDR4420A ,Single N-Channel, Logic Level, PowerTrench TM MOSFETapplications where small package size is requiredwithout compromising power handling and fast swi ..
FDR6580 ,N-Channel 2.5V Specified PowerTrench MOSFETGeneral Description MOSFETPowerTrenchJuly 2001FDR6580
FDR6674A ,30V N-Channel PowerTrench MOSFETApplications • High power and current handling capability in a smaller footprint than SO8 • Synchro ..
FDR6674A ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 11.5 A, 30 V. R = 9.5 mΩ @ V = 4.5 V DS(ON) GS ..
FDR6678A ,30V N-Channel PowerTrench MOSFETApplications • High power and current in a smaller footprint than • DC/DC converter SO-8 SD5 4DS6 ..
FQB12P20TM ,200V P-Channel QFETMay 2000TMQFET QFET QFET QFETFQB12P20 / FQI12P20200V P-Channel MOSFET
FQB13N06 ,60V N-Channel MOSFETapplications such as DC/DCconverters, high efficiency switching for powermanagement in portable and ..
FQB13N06L ,60V LOGIC N-Channel MOSFETapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FQB13N06LTM ,60V N-Channel Logic level QFETFeaturesThese N-Channel enhancement mode power field effect • 13.6A, 60V, R = 0.11Ω @V = 10 VDS(on) ..
FQB13N06LTM ,60V N-Channel Logic level QFETapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FQB13N06TM ,60V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect • 13A, 60V, R = 0.135Ω @V = 10 VDS(on) ..
FDR4420A
Single N-Channel, Logic Level, PowerTrench TM MOSFET
June 1998 FDR4420A TM Single N-Channel, Logic Level, PowerTrench MOSFET General Description Features The SuperSOT-8 family of N-Channel Logic Level MOSFETs 11 A, 30 V. R = 0.009 W @ V = 10 V, DS(ON) GS have been designed to provide a low profile, small footprint R = 0.013 W @ V = 4.5 V. DS(ON) GS alternative to industry standard SO-8 little foot type product. Fast switching speed. These MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been tailored to Low gate charge. minimize the on-state resistance and yet maintain superior switching performance. Small footprint 38% smaller than a standard SO-8. These devices are well suited for low voltage and battery Low profile package(1mm thick). powered applications where small package size is required without compromising power handling and fast switching. Power handling capability similar to SO-8. TM TM SOIC-16 SuperSOT -8 SOT-23 SuperSOT -6 SO-8 SOT-223 S 5 4 D D S 3 6 7 2 G D D 1 1 pin 8 TM D SuperSOT -8 o Absolute Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter FDR4420A Units Drain-Source Voltage 30 V V DSS V Gate-Source Voltage ±20 V GSS I Draint Current - Continuous (Note 1a) 11 A D - Pulsed 40 Maximum Power Dissipation (Note 1a) 1.8 P W D (Note 1b) 1 (Note 1c) 0.9 T ,T Operating and Storage Temperature Range -55 to 150 °C J STG THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Ambient (Note 1a) 70 °C/W qJA R Thermal Resistance, Junction-to-Case (Note 1) 20 °C/W qJC © 1998 FDR4420 Rev.D 4420A
