FDPF7N60NZ ,N-Channel UniFETTM II MOSFET 600V, 6.5A, 1.25?Applications• LCD/LED TV• Lighting• Uninterruptible Power Supply• AC-DC Power SupplyGGDTO-220D TO-2 ..
FDPF8N50NZ ,N-Channel UniFETTM II MOSFET 500V, 8A, 850m?Features DescriptionTM ®•R = 770 m (Typ.) @ V = 10 V, I = 4 A UniFET II MOSFET is Fairchild Semic ..
FDPF8N50NZ ,N-Channel UniFETTM II MOSFET 500V, 8A, 850m?Applications• LCD/LED TV• Lighting• Uninterruptible Power Supply• AC-DC Power SupplyDDGGGGDDTO-220 ..
FDQ7236AS ,30V Dual Notebook Power Supply N-Channel PowerTrench?in SO-14 PackageElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions Type M ..
FDQ7238AS ,30V Dual Notebook Power Supply N-Channel PowerTrench?in SO-14 PackageFeatures The FDQ7238AS is designed to replace two single SO-• Q2: 14 A, 30V. R = 8.7 mΩ @ V = 10V D ..
FDQ7238S ,Dual Notebook Power Supply N-Channel PwerTrench in SO-14 PackageFeatures The FDQ7238S is designed to replace two single SO-8 · Q2: 14 A, 30V. R = 9.5 mW @ V = 10V ..
FQB10N20C ,200V N-Channel Advance QFET C-seriesFeaturesThese N-Channel enhancement mode power field effect 9.5A, 200V, R = 0.36Ω @V = 10 VDS(on) ..
FQB10N20CTM ,200V N-Channel Advance QFET C-seriesFQB10N20C/FQI10N20C TMQFETFQB10N20C/FQI10N20C200V N-Channel MOSFET
FQB10N20L ,200V LOGIC N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 10A, 200V, R = 0.36Ω @V = 10 VDS(on) ..
FQB10N60C ,600V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 9.5A, 600V, R = 0.73Ω @V = 10 VDS(on) ..
FQB11N40 ,400V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 11.4A, 400V, R = 0.48Ω @V = 10 VDS(on ..
FQB11N40C ,400V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect • 10.5 A, 400V, R = 0.5 Ω @V = 10 VD ..
FDPF7N60NZ
N-Channel UniFETTM II MOSFET 600V, 6.5A, 1.25?
TM FDP7N60NZ / FDPF7N60NZ N-Channel UniFET II MOSFET March 2013 FDP7N60NZ / FDPF7N60NZ TM N-Channel UniFET II MOSFET 600 V, 6.5 A, 1.25 Features Description TM ® UniFET II MOSFET is Fairchild Semiconductor ’s high volt- •R = 1.05 (Typ.) @ V = 10 V, I = 3.25 A DS(on) GS D age MOSFET family based on advanced planar stripe and • Low Gate Charge (Typ. 13 nC) DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and • Low C (Typ. 7 pF) rss also provides superior switching performance and higher ava- • 100% Avalanche Tested lanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM • Improved dv/dt Capability surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat • ESD Improved Capability panel display (FPD) TV power, ATX and electronic lamp ballasts. • RoHS Compliant Applications • LCD/LED TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supply G G D TO-220 D TO-220F S S o MOSFET Maximum Ratings T = 25 C unless otherwise noted* C FDPF7N60NZ Symbol Parameter FDP7N60NZ Unit V Drain to Source Voltage 600 V DSS V Gate to Source Voltage ±30 V GSS o - Continuous (T = 25 C) 6.5 6.5* C I Drain Current A D o - Continuous (T = 100 C) 3.9 3.9* C I Drain Current - Pulsed (Note 1) 26 26* A DM E Single Pulsed Avalanche Energy (Note 2) 275 mJ AS I Avalanche Current (Note 1) 6.5 A AR E Repetitive Avalanche Energy (Note 1) 14.7 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 10 V/ns o (T = 25 C) 147 33 W C P Power Dissipation D o o - Derate above 25 C 1.2 0.26 W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDP7N60NZ FDPF7N60NZ Unit R Thermal Resistance, Junction to Case, Max. 0.85 3.8 JC o R Thermal Resistance, Case to Sink, Typ. 0.5 - C/W CS R Thermal Resistance, Junction to Ambient, Max. 62.5 62.5 JA 1 ©2010 FDP7N60NZ / FDPF7N60NZ Rev. C0
