FDPF7N50U ,N-Channel UniFETTM Ultra FRFETTM MOSFET 500V, 5A, 1.5?Features DescriptionTM ®UniFET MOSFET is Fairchild Semiconductor ’s high voltage •R = 1.5 (Max.) ..
FDPF7N60NZ ,N-Channel UniFETTM II MOSFET 600V, 6.5A, 1.25?Applications• LCD/LED TV• Lighting• Uninterruptible Power Supply• AC-DC Power SupplyGGDTO-220D TO-2 ..
FDPF8N50NZ ,N-Channel UniFETTM II MOSFET 500V, 8A, 850m?Features DescriptionTM ®•R = 770 m (Typ.) @ V = 10 V, I = 4 A UniFET II MOSFET is Fairchild Semic ..
FDPF8N50NZ ,N-Channel UniFETTM II MOSFET 500V, 8A, 850m?Applications• LCD/LED TV• Lighting• Uninterruptible Power Supply• AC-DC Power SupplyDDGGGGDDTO-220 ..
FDQ7236AS ,30V Dual Notebook Power Supply N-Channel PowerTrench?in SO-14 PackageElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions Type M ..
FDQ7238AS ,30V Dual Notebook Power Supply N-Channel PowerTrench?in SO-14 PackageFeatures The FDQ7238AS is designed to replace two single SO-• Q2: 14 A, 30V. R = 8.7 mΩ @ V = 10V D ..
FQB10N20C ,200V N-Channel Advance QFET C-seriesFeaturesThese N-Channel enhancement mode power field effect 9.5A, 200V, R = 0.36Ω @V = 10 VDS(on) ..
FQB10N20CTM ,200V N-Channel Advance QFET C-seriesFQB10N20C/FQI10N20C TMQFETFQB10N20C/FQI10N20C200V N-Channel MOSFET
FQB10N20L ,200V LOGIC N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 10A, 200V, R = 0.36Ω @V = 10 VDS(on) ..
FQB10N60C ,600V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 9.5A, 600V, R = 0.73Ω @V = 10 VDS(on) ..
FQB11N40 ,400V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 11.4A, 400V, R = 0.48Ω @V = 10 VDS(on ..
FQB11N40C ,400V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect • 10.5 A, 400V, R = 0.5 Ω @V = 10 VD ..
FDPF7N50U
N-Channel UniFETTM Ultra FRFETTM MOSFET 500V, 5A, 1.5?
TM TM FDPF7N50U N-Channel UniFET Ultra FRFET MOSFET March 2013 FDPF7N50U TM TM N-Channel UniFET Ultra FRFET MOSFET 500 V, 5 A, 1.5 Features Description TM ® UniFET MOSFET is Fairchild Semiconductor ’s high voltage •R = 1.5 (Max.) @ V = 10 V, I = 2.5 A DS(on) GS D MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ.12.8 nC) This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche •Low C (Typ. 9 pF) rss TM energy strength. UniFET Ultra FRFET MOSFET has much • 100% Avalanche Tested superior body diode reverse recovery performance. Its t is less rr than 50nsec and the reverse dv/dt immunity is 20V/nsec while • Improved dv/dt Capability normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore UniFET Ultra FRFET MOSFET can Applications remove additional component and improve system reliability in certain applications that require performance improvement of • LCD/LED TV the MOSFET’s body diode. This device family is suitable for • Lighting switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and • Uninterruptible Power Supply electronic lamp ballasts. • AC-DC Power Supply D G G G D TO-220 D TO-220F S S S Absolute Maximum Ratings Symbol Parameter FDPF7N50U Unit V Drain-Source Voltage 500 V DSS I Drain Current - Continuous (T = 25C) 5 * A D C - Continuous (T = 100C) 3.0 * A C (Note 1) I Drain Current - Pulsed 20 * A DM V Gate-Source voltage 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 125 mJ AS I Avalanche Current (Note 1) 5 A AR E Repetitive Avalanche Energy (Note 1) 8.9 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns P Power Dissipation (T = 25C) 31.3 W D C - Derate above 25C 0.25 W/C T T Operating and Storage Temperature Range -55 to +150 C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 C 1/8” from Case for 5 Seconds * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FDPF7N50U Unit R Thermal Resistance, Junction-to-Case, Max. 4.0 JC C/W 62.5 R Thermal Resistance, Junction-to-Ambient, Max. JA ©2009 1 FDPF7N50U Rev. C0
