FDPF7N50 ,N-Channel UniFETTM MOSFET 500V, 7A, 900m?Features DescriptionTM ®UniFET MOSFET is Fairchild Semiconductor ’s high voltage •R = 900 m (Max. ..
FDPF7N50F ,N-Channel UniFETTM FRFET?MOSFET 500V, 6A, 1.15?Features Description•R = 0.95Ω ( Typ.)@ V = 10V, I = 3A These N-Channel enhancement mode power fiel ..
FDPF7N50F ,N-Channel UniFETTM FRFET?MOSFET 500V, 6A, 1.15?FDP7N50F / FDPF7N50F N-Channel MOSFET November 2007TMUniFETFDP7N50F / FDPF7N50F ..
FDPF7N50U ,N-Channel UniFETTM Ultra FRFETTM MOSFET 500V, 5A, 1.5?Features DescriptionTM ®UniFET MOSFET is Fairchild Semiconductor ’s high voltage •R = 1.5 (Max.) ..
FDPF7N60NZ ,N-Channel UniFETTM II MOSFET 600V, 6.5A, 1.25?Applications• LCD/LED TV• Lighting• Uninterruptible Power Supply• AC-DC Power SupplyGGDTO-220D TO-2 ..
FDPF8N50NZ ,N-Channel UniFETTM II MOSFET 500V, 8A, 850m?Features DescriptionTM ®•R = 770 m (Typ.) @ V = 10 V, I = 4 A UniFET II MOSFET is Fairchild Semic ..
FQAF7N90 ,900V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 5.2A, 900V, R = 1.55Ω @V = 10 VDS(on) ..
FQAF9N50 ,500V N-Channel MOSFET
FQAF9N90 ,900V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 5.9A, 900V, R = 1.3Ω @V = 10 VDS(on) ..
FQAF9P25 ,250V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect -7.1A, -250V, R = 0.62Ω @V = -10 VDS( ..
FQB10N20C ,200V N-Channel Advance QFET C-seriesFeaturesThese N-Channel enhancement mode power field effect 9.5A, 200V, R = 0.36Ω @V = 10 VDS(on) ..
FQB10N20CTM ,200V N-Channel Advance QFET C-seriesFQB10N20C/FQI10N20C TMQFETFQB10N20C/FQI10N20C200V N-Channel MOSFET
FDPF7N50
N-Channel UniFETTM MOSFET 500V, 7A, 900m?
TM FDP7N50 N-Channel UniFET MOSFET March 2013 FDP7N50 TM N-Channel UniFET MOSFET 500 V, 7 A, 900 m Features Description TM ® UniFET MOSFET is Fairchild Semiconductor ’s high voltage •R = 900 m (Max.) @ V = 10 V, I = 3.5 A DS(on) GS D MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 12.8 nC) This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche •Low C (Typ. 9 pF) rss energy strength. This device family is suitable for switching • 100% Avalanche Tested power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic Applications lamp ballasts. • ALCD/LED TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supplypplications D G G D TO-220 S S Absolute Maximum Ratings Symbol Parameter FDP7N50 Unit V Drain-Source Voltage 500 V DSS I Drain Current - Continuous (T = 25C) 7 A D C - Continuous (T = 100C) 4.2 A C (Note 1) I Drain Current - Pulsed 28 A DM V Gate-Source voltage 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 270 mJ AS I Avalanche Current (Note 1) 7 A AR E Repetitive Avalanche Energy (Note 1) 8.9 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25C) 89 W D C - Derate above 25C 0.71 W/C T T Operating and Storage Temperature Range -55 to +150 C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 C 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter FDP7N50 Unit R Thermal Resistance, Junction-to-Case, Max. 1.4 JC R 0.5 CS Thermal Resistance, Case-to-Sink, Typ. C/W 62.5 R Thermal Resistance, Junction-to-Ambient, Max. JA ©2007 1 FDP7N50 Rev. C0
