FDPF5N60NZ ,N-Channel UniFETTM II MOSFET 600V, 4.5A, 2?Applications• LCD/LED TV• Lighting• Uninterruptible Power Supply• AC-DC Power SupplyDDGGGGDTO-220 D ..
FDPF7N50 ,N-Channel UniFETTM MOSFET 500V, 7A, 900m?Features DescriptionTM ®UniFET MOSFET is Fairchild Semiconductor ’s high voltage •R = 900 m (Max. ..
FDPF7N50F ,N-Channel UniFETTM FRFET?MOSFET 500V, 6A, 1.15?Features Description•R = 0.95Ω ( Typ.)@ V = 10V, I = 3A These N-Channel enhancement mode power fiel ..
FDPF7N50F ,N-Channel UniFETTM FRFET?MOSFET 500V, 6A, 1.15?FDP7N50F / FDPF7N50F N-Channel MOSFET November 2007TMUniFETFDP7N50F / FDPF7N50F ..
FDPF7N50U ,N-Channel UniFETTM Ultra FRFETTM MOSFET 500V, 5A, 1.5?Features DescriptionTM ®UniFET MOSFET is Fairchild Semiconductor ’s high voltage •R = 1.5 (Max.) ..
FDPF7N60NZ ,N-Channel UniFETTM II MOSFET 600V, 6.5A, 1.25?Applications• LCD/LED TV• Lighting• Uninterruptible Power Supply• AC-DC Power SupplyGGDTO-220D TO-2 ..
FQAF7N90 ,900V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 5.2A, 900V, R = 1.55Ω @V = 10 VDS(on) ..
FQAF9N50 ,500V N-Channel MOSFET
FQAF9N90 ,900V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 5.9A, 900V, R = 1.3Ω @V = 10 VDS(on) ..
FQAF9P25 ,250V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect -7.1A, -250V, R = 0.62Ω @V = -10 VDS( ..
FQB10N20C ,200V N-Channel Advance QFET C-seriesFeaturesThese N-Channel enhancement mode power field effect 9.5A, 200V, R = 0.36Ω @V = 10 VDS(on) ..
FQB10N20CTM ,200V N-Channel Advance QFET C-seriesFQB10N20C/FQI10N20C TMQFETFQB10N20C/FQI10N20C200V N-Channel MOSFET
FDPF5N60NZ
N-Channel UniFETTM II MOSFET 600V, 4.5A, 2?
TM FDP5N60NZ / FDPF5N60NZ N-Channel UniFET II MOSFET March 2013 FDP5N60NZ / FDPF5N60NZ TM N-Channel UniFET II MOSFET 600 V, 4.5 A, 2.0 Features Description TM ® UniFET II MOSFET is Fairchild Semiconductor ’s high volt- •R = 1.65 (Typ.) @ V = 10 V, I = 2.25 A DS(on) GS D age MOSFET family based on advanced planar stripe and • Low Gate Charge (Typ. 10 nC) DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and • Low C (Typ. 5 pF) rss also provides superior switching performance and higher ava- • 100% Avalanche Tested lanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM • Improved dv/dt Capability surge stress. This device family is suitable for switching power • ESD Improved Capability converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. • RoHS Compliant Applications • LCD/LED TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supply DD GG G G D TO-220 D TO-220F SS S S o MOSFET Maximum Ratings T = 25 C unless otherwise noted* C Symbol Parameter FDP5N60NZ FDPF5N60NZ Unit V Drain to Source Voltage 600 V DSS V Gate to Source Voltage ±25 V GSS o - Continuous (T = 25 C) 4.5 4.5* C I Drain Current A D o - Continuous (T = 100 C) 2.7 2.7* C I Drain Current - Pulsed (Note 1) 18 18* A DM E Single Pulsed Avalanche Energy (Note 2) 175 mJ AS I Avalanche Current (Note 1) 4.5 A AR E Repetitive Avalanche Energy (Note 1) 10 mJ AR MOSFET dv/dt Ruggedness 20 V/ns dv/dt Peak Diode Recovery dv/dt (Note 3) 10 V/ns o (T = 25 C) 100 33 W C P Power Dissipation D o o - Derate above 25 C 0.8 0.27 W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8” from Case for 5 Seconds *Dran current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDP5N60NZ FDPF5N60NZ Unit R Thermal Resistance, Junction to Case, Max. 1.25 3.75 JC o R Thermal Resistance, Case to Sink, Typ. 0.5 - C/W CS R Thermal Resistance, Junction to Ambient, Max. 62.5 62.5 JA 1 ©2011 FDP5N60NZ / FDPF5N60NZ Rev. C1
