FDPF5N50UT ,N-Channel UniFETTM Ultra FRFETTM MOSFET 500V, 4A, 2?applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and elec ..
FDPF5N60NZ ,N-Channel UniFETTM II MOSFET 600V, 4.5A, 2?Applications• LCD/LED TV• Lighting• Uninterruptible Power Supply• AC-DC Power SupplyDDGGGGDTO-220 D ..
FDPF7N50 ,N-Channel UniFETTM MOSFET 500V, 7A, 900m?Features DescriptionTM ®UniFET MOSFET is Fairchild Semiconductor ’s high voltage •R = 900 m (Max. ..
FDPF7N50F ,N-Channel UniFETTM FRFET?MOSFET 500V, 6A, 1.15?Features Description•R = 0.95Ω ( Typ.)@ V = 10V, I = 3A These N-Channel enhancement mode power fiel ..
FDPF7N50F ,N-Channel UniFETTM FRFET?MOSFET 500V, 6A, 1.15?FDP7N50F / FDPF7N50F N-Channel MOSFET November 2007TMUniFETFDP7N50F / FDPF7N50F ..
FDPF7N50U ,N-Channel UniFETTM Ultra FRFETTM MOSFET 500V, 5A, 1.5?Features DescriptionTM ®UniFET MOSFET is Fairchild Semiconductor ’s high voltage •R = 1.5 (Max.) ..
FQAF7N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 5.7A, 600V, R = 1.0Ω @V = 10 VDS(on) ..
FQAF7N90 ,900V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 5.2A, 900V, R = 1.55Ω @V = 10 VDS(on) ..
FQAF9N50 ,500V N-Channel MOSFET
FQAF9N90 ,900V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 5.9A, 900V, R = 1.3Ω @V = 10 VDS(on) ..
FQAF9P25 ,250V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect -7.1A, -250V, R = 0.62Ω @V = -10 VDS( ..
FQB10N20C ,200V N-Channel Advance QFET C-seriesFeaturesThese N-Channel enhancement mode power field effect 9.5A, 200V, R = 0.36Ω @V = 10 VDS(on) ..
FDPF5N50UT
N-Channel UniFETTM Ultra FRFETTM MOSFET 500V, 4A, 2?
TM TM FDPF5N50UT N-Channel UniFET Ultra FRFET MOSFET March 2013 FDPF5N50UT TM TM N-Channel UniFET Ultra FRFET MOSFET 500 V, 4 A, 2.0 Features Description TM ® UniFET MOSFET is Fairchild Semiconductor ’s high voltage •R = 1.65 (Typ.) @ V = 10 V, I = 2 A DS(on) GS D MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 11 nC) This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche • Low C (Typ. 5 pF) rss TM energy strength. UniFET Ultra FRFET MOSFET has much • 100% Avalanche Tested superior body diode reverse recovery performance. Its t is less rr than 50nsec and the reverse dv/dt immunity is 20V/nsec while • Improved dv/dt Capability normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore UniFET Ultra FRFET MOSFET can • RoHS Compliant remove additional component and improve system reliability in certain applications that require performance improvement of the Applications MOSFET’s body diode. This device family is suitable for switch- • LCD/LED TV ing power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic • Lighting lamp ballasts. • Uninterruptible Power Supply • AC-DC Power Supply D G G D TO-220F S S o MOSFET Maximum Ratings T = 25 C unless otherwise noted* C Symbol Parameter FDPF5N50UT Unit V Drain to Source Voltage 500 V DSS V Gate to Source Voltage ±30 V GSS o - Continuous (T = 25 C) 4* C I Drain Current A D o - Continuous (T = 100 C) 2.4* C I Drain Current - Pulsed (Note 1) 16* A DM E Single Pulsed Avalanche Energy (Note 2) 216 mJ AS I Avalanche Current (Note 1) 4 A AR E Repetitive Avalanche Energy (Note 1) 8.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns o (T = 25 C) 28 W C P Power Dissipation D o o - Derate above 25C0.22W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering Purpose, o 300 C T L 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDPF5N50UT Unit R Thermal Resistance, Junction to Case, Max. 4.5 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 62.5 JA 1 ©2012 FDPF5N50UT Rev.C1
