FDPF5N50T ,N-Channel UniFETTM MOSFET 500V, 5A, 1.4?applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and elec ..
FDPF5N50T ,N-Channel UniFETTM MOSFET 500V, 5A, 1.4?Features DescriptionTM ®UniFET MOSFET is Fairchild Semiconductor ’s high voltage •R = 1.15 (Typ. ..
FDPF5N50T. ,N-Channel UniFETTM MOSFET 500V, 5A, 1.4?Applications• LCD/LED TV• Lighting• Uninterruptible Power Supply• AC-DC Power SupplylicationsDGGDTO ..
FDPF5N50UT ,N-Channel UniFETTM Ultra FRFETTM MOSFET 500V, 4A, 2?applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and elec ..
FDPF5N60NZ ,N-Channel UniFETTM II MOSFET 600V, 4.5A, 2?Applications• LCD/LED TV• Lighting• Uninterruptible Power Supply• AC-DC Power SupplyDDGGGGDTO-220 D ..
FDPF7N50 ,N-Channel UniFETTM MOSFET 500V, 7A, 900m?Features DescriptionTM ®UniFET MOSFET is Fairchild Semiconductor ’s high voltage •R = 900 m (Max. ..
FQAF65N06 ,60V N-Channel MOSFETapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FQAF70N10 ,100V N-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQAF70N15 ,N-Channel Power MOSFET
FQAF7N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 5.7A, 600V, R = 1.0Ω @V = 10 VDS(on) ..
FQAF7N90 ,900V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 5.2A, 900V, R = 1.55Ω @V = 10 VDS(on) ..
FQAF9N50 ,500V N-Channel MOSFET
FDPF5N50T-FDPF5N50T.
N-Channel UniFETTM MOSFET 500V, 5A, 1.4?
TM FDPF5N50T N-Channel UniFET MOSFET March 2013 FDPF5N50T TM N-Channel UniFET MOSFET 500 V, 5 A, 1.4 Features Description TM ® UniFET MOSFET is Fairchild Semiconductor ’s high voltage •R = 1.15 (Typ.) @ V = 10 V, I = 2.5 A DS(on) GS D MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 11 nC) This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche • Low C (Typ. 5 pF) rss energy strength. This device family is suitable for switching • 100% Avalanche Tested power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic • Improved dv/dt Capability lamp ballasts. • RoHS Compliant Applications • LCD/LED TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supplylications D G G D TO-220F S S o MOSFET Maximum Ratings T = 25 C unless otherwise noted* C Symbol Parameter FDPF5N50T Unit V Drain to Source Voltage 500 V DSS V Gate to Source Voltage ±30 V GSS o - Continuous (T = 25 C) 5* C I Drain Current A D o - Continuous (T = 100 C) 3* C I Drain Current - Pulsed (Note 1) 20* A DM E Single Pulsed Avalanche Energy (Note 2) 225 mJ AS I Avalanche Current (Note 1) 5 A AR E Repetitive Avalanche Energy (Note 1) 8.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns o (T = 25 C) 28 W C P Power Dissipation D o o - Derate above 25C0.22W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDPF5N50T Unit R Thermal Resistance, Junction to Case, Max. 4.5 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 62.5 JA 1 ©2012 FDPF5N50T Rev. C0
