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Partno	Mfg	Dc	Qty	Available	Descript
FDPF33N25T \|FDPF33N25T	FSC	N/a	8000	avai	N-Channel UniFETTM MOSFET 250V, 33A, 94m?

FDPF33N25T ,N-Channel UniFETTM MOSFET 250V, 33A, 94m?Features DescriptionTM ®UniFET MOSFET is Fairchild Semiconductor ’s high voltage •R = 94 m (Max.) ..
FDPF3860T ,N-Channel PowerTrench?MOSFET 100V, 20A, 38.2m?ApplicationsRDS(on) • Consumer Appliances• High Power and Current Handling Capability• LCD/LED/PDP ..
FDPF39N20 ,N-Channel UniFETTM MOSFET 200V, 39A, 66m?Applications(PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.•PDP TV• Lig ..
FDPF5N50T ,N-Channel UniFETTM MOSFET 500V, 5A, 1.4?applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and elec ..
FDPF5N50T ,N-Channel UniFETTM MOSFET 500V, 5A, 1.4?Features DescriptionTM ®UniFET MOSFET is Fairchild Semiconductor ’s high voltage •R = 1.15  (Typ. ..
FDPF5N50T. ,N-Channel UniFETTM MOSFET 500V, 5A, 1.4?Applications• LCD/LED TV• Lighting• Uninterruptible Power Supply• AC-DC Power SupplylicationsDGGDTO ..
FQAF34N20L ,200V LOGIC N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 23A, 200V, R = 0.075Ω @V = 10 VDS(on) ..
FQAF34N25 ,250V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 21.7A, 250V, R = 0.085Ω @V = 10 VDS(o ..
FQAF47P06 ,60V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect • -38A, -60V, R = 0.026Ω @V = -10 VDS(o ..
FQAF65N06 ,60V N-Channel MOSFETapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FQAF70N10 ,100V N-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQAF70N15 ,N-Channel Power MOSFET

FDPF33N25T
N-Channel UniFETTM MOSFET 250V, 33A, 94m?
TM FDPF33N25T N-Channel UniFET MOSFET March 2013 FDPF33N25T TM N-Channel UniFET MOSFET 250 V, 33 A, 94 m Features Description TM ® UniFET MOSFET is Fairchild Semiconductor ’s high voltage •R = 94 m (Max.) @ V = 10 V, I = 16.5 A DS(on) GS D MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ.36.8 nC) This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche • Low Crss (Typ. 39 pF) energy strength. This device family is suitable for switching • Improved dv/dt Capability power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic Applications lamp ballasts. •PDP TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supply D G G D TO-220F S S Absolute Maximum Ratings Symbol Parameter FDPF33N25T Unit V Drain-Source Voltage 250 V DSS I Drain Current - Continuous (T = 25C) 33* A D C - Continuous (T = 100C) 20.4* A C (Note 1) I Drain Current - Pulsed A DM 132* V Gate-Source voltage  30 V GSS (Note 2) E Single Pulsed Avalanche Energy 918 mJ AS (Note 1) I Avalanche Current 33 A AR (Note 1) E Repetitive Avalanche Energy 23.5 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt 4.5 V/ns P Power Dissipation (T = 25C) 37 W D C - Derate above 25C 0.29 W/C T T Operating and Storage Temperature Range -55 to +150 C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 C 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDPF33N25T Unit R Thermal Resistance, Junction-to-Case, Max. 3.4 C/W JC R Thermal Resistance, Junction-to-Ambient, Max. 62.5 C/W JA ©2007 1 FDPF33N25T Rev. C0

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