FDPF2710T ,N-Channel PowerTrench?MOSFET 250V, 25A, 42.5m?General Description DescriptionThis N-Channel MOSFET is produced using Fairchild Semicon- • 25A, 25 ..
FDPF33N25T ,N-Channel UniFETTM MOSFET 250V, 33A, 94m?Features DescriptionTM ®UniFET MOSFET is Fairchild Semiconductor ’s high voltage •R = 94 m (Max.) ..
FDPF3860T ,N-Channel PowerTrench?MOSFET 100V, 20A, 38.2m?ApplicationsRDS(on) • Consumer Appliances• High Power and Current Handling Capability• LCD/LED/PDP ..
FDPF39N20 ,N-Channel UniFETTM MOSFET 200V, 39A, 66m?Applications(PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.•PDP TV• Lig ..
FDPF5N50T ,N-Channel UniFETTM MOSFET 500V, 5A, 1.4?applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and elec ..
FDPF5N50T ,N-Channel UniFETTM MOSFET 500V, 5A, 1.4?Features DescriptionTM ®UniFET MOSFET is Fairchild Semiconductor ’s high voltage •R = 1.15 (Typ. ..
FQAF34N20 ,200V N-Channel MOSFET
FQAF34N20L ,200V LOGIC N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 23A, 200V, R = 0.075Ω @V = 10 VDS(on) ..
FQAF34N25 ,250V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 21.7A, 250V, R = 0.085Ω @V = 10 VDS(o ..
FQAF47P06 ,60V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect • -38A, -60V, R = 0.026Ω @V = -10 VDS(o ..
FQAF65N06 ,60V N-Channel MOSFETapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FQAF70N10 ,100V N-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FDPF2710T
N-Channel PowerTrench?MOSFET 250V, 25A, 42.5m?
FDPF2710T 250V N-Channel PowerTrench MOSFET September 2007 FDPF2710T 250V N-Channel PowerTrench MOSFET General Description Description This N-Channel MOSFET is produced using Fairchild Semicon- • 25A, 250V, R = 36.3mΩ @V = 10 V DS(on) GS ductor’s advanced PowerTrench process that has been espe- • Fast switching speed cially tailored to minimize the on-state resistance and yet • Low gate charge maintain superior switching performance. • High performance trench technology for extremely low R DS(on) • High power and current handling capability Application • Ballast Application D G G D S TO-220F S Absolute Maximum Ratings Symbol Parameter Ratings Unit V Drain-Source Voltage 250 V DS V Gate-Source voltage ± 30 V GS I Drain Current - Continuous (T = 25°C) 25 A D C - Continuous (T = 100°C) 18.8 A C (Note 1) I Drain Current - Pulsed A DM 100 (Note 2) E Single Pulsed Avalanche Energy 145 mJ AS dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25°C) 62.5 W D C - Derate above 25°C 0.5 W/°C T T Operating and Storage Temperature Range -55 to +150 °C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 °C 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter Min Max Unit R Thermal Resistance, Junction-to-Case -- 2.0 °C/W θJC R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA ©2007 1 FDPF2710T Rev. A
