FDPF20N50 ,N-Channel UniFETTM MOSFET 500V, 20A, 230m?Features Description• 20A, 500V, R = 0.23Ω @V = 10 V These N-Channel enhancement mode power field e ..
FDPF2710T ,N-Channel PowerTrench?MOSFET 250V, 25A, 42.5m?General Description DescriptionThis N-Channel MOSFET is produced using Fairchild Semicon- • 25A, 25 ..
FDPF33N25T ,N-Channel UniFETTM MOSFET 250V, 33A, 94m?Features DescriptionTM ®UniFET MOSFET is Fairchild Semiconductor ’s high voltage •R = 94 m (Max.) ..
FDPF3860T ,N-Channel PowerTrench?MOSFET 100V, 20A, 38.2m?ApplicationsRDS(on) • Consumer Appliances• High Power and Current Handling Capability• LCD/LED/PDP ..
FDPF39N20 ,N-Channel UniFETTM MOSFET 200V, 39A, 66m?Applications(PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.•PDP TV• Lig ..
FDPF5N50T ,N-Channel UniFETTM MOSFET 500V, 5A, 1.4?applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and elec ..
FQAF28N15 ,150V N-Channel MOSFET
FQAF33N10 ,100V N-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQAF34N20 ,200V N-Channel MOSFET
FQAF34N20L ,200V LOGIC N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 23A, 200V, R = 0.075Ω @V = 10 VDS(on) ..
FQAF34N25 ,250V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 21.7A, 250V, R = 0.085Ω @V = 10 VDS(o ..
FQAF47P06 ,60V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect • -38A, -60V, R = 0.026Ω @V = -10 VDS(o ..
FDPF20N50
N-Channel UniFETTM MOSFET 500V, 20A, 230m?
FDP20N50 / FDPF20N50 500V N-Channel MOSFET April 2007 TM UniFET FDP20N50 / FDPF20N50 500V N-Channel MOSFET Features Description • 20A, 500V, R = 0.23Ω @V = 10 V These N-Channel enhancement mode power field effect DS(on) GS transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( typical 45.6 nC) stripe, DMOS technology. •Low C ( typical 27 pF) rss This advanced technology has been especially tailored to •Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the avalanche • Improved dv/dt capability and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D G TO-220F TO-220 G D S G D FDPF Series S FDP Series S Absolute Maximum Ratings Symbol Parameter FDP20N50 FDPF20N50 Unit V Drain-Source Voltage 500 V DSS I Drain Current - Continuous (T = 25°C) 20 20 * A D C - Continuous (T = 100°C) 12.9 12.9 * A C (Note 1) I Drain Current - Pulsed 80 80 * A DM V Gate-Source voltage ±30 V GSS (Note 2) E Single Pulsed Avalanche Energy 1110 mJ AS I Avalanche Current (Note 1) 20 A AR E Repetitive Avalanche Energy (Note 1) 25 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25°C) 250 38.5 W D C - Derate above 25°C 2.0 0.3 W/°C T T Operating and Storage Temperature Range -55 to +150 °C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 °C 1/8” from Case for 5 Seconds * Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDP20N50 FDPF20N50 Unit R Thermal Resistance, Junction-to-Case 0.5 3.3 °C/W θJC R Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W θJA ©2007 1 FDP20N50 / FDPF20N50 Rev. C
