FDPF18N50T ,N-Channel UniFETTM MOSFET 500V, 18A, 265m?Applications(PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.• LCD/LED/PD ..
FDPF20N50 ,N-Channel UniFETTM MOSFET 500V, 20A, 230m?Features Description• 20A, 500V, R = 0.23Ω @V = 10 V These N-Channel enhancement mode power field e ..
FDPF2710T ,N-Channel PowerTrench?MOSFET 250V, 25A, 42.5m?General Description DescriptionThis N-Channel MOSFET is produced using Fairchild Semicon- • 25A, 25 ..
FDPF33N25T ,N-Channel UniFETTM MOSFET 250V, 33A, 94m?Features DescriptionTM ®UniFET MOSFET is Fairchild Semiconductor ’s high voltage •R = 94 m (Max.) ..
FDPF3860T ,N-Channel PowerTrench?MOSFET 100V, 20A, 38.2m?ApplicationsRDS(on) • Consumer Appliances• High Power and Current Handling Capability• LCD/LED/PDP ..
FDPF39N20 ,N-Channel UniFETTM MOSFET 200V, 39A, 66m?Applications(PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.•PDP TV• Lig ..
FQAF19N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 11.2A, 600V, R = 0.38 Ω @ V = 10 VDS( ..
FQAF27N25 ,250V N-Channel MOSFET
FQAF28N15 ,150V N-Channel MOSFET
FQAF33N10 ,100V N-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQAF34N20 ,200V N-Channel MOSFET
FQAF34N20L ,200V LOGIC N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 23A, 200V, R = 0.075Ω @V = 10 VDS(on) ..
FDPF18N50T
N-Channel UniFETTM MOSFET 500V, 18A, 265m?
TM FDP18N50 / FDPF18N50 / FDPF18N50T N-Channel UniFET MOSFET April 2013 FDP18N50 / FDPF18N50 / FDPF18N50T TM N-Channel UniFET MOSFET 500 V, 18 A, 265 mΩ Features Description TM ® • R = 265 mΩ (Max.) @ V = 10 V, I = 9A UniFET MOSFET is Fairchild Semiconductor ’s high voltage D DS(on) GS MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 45 nC) This MOSFET is tailored to reduce on-state resistance, and to • Low Crss (Typ. 25 pF) provide better switching performance and higher avalanche • 100% Avalanche Tested energy strength. This device family is suitable for switching power converter applications such as power factor correction Applications (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. • LCD/LED/PDP TV • Lighting • Uninterruptible Power Supply D G G G D D S S TO-220F TO-220 S Absolute Maximum Ratings FDPF18N50 / Symbol Parameter FDP18N50 Unit FDPF18N50T V Drain-Source Voltage 500 V DSS I Drain Current - Continuous (T = 25°C) 18 18 * A D C - Continuous (T = 100°C) 10.8 10.8 * A C (Note 1) I Drain Current - Pulsed 72 72 * A DM V Gate-Source voltage ±30 V GSS (Note 2) E Single Pulsed Avalanche Energy 945 mJ AS I Avalanche Current (Note 1) 18 A AR E Repetitive Avalanche Energy (Note 1) 23.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25°C) 235 38.5 W D C - Derate above 25°C 1.88 0.3 W/°C T T Operating and Storage Temperature Range -55 to +150 °C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 °C 1/8” from Case for 5 Seconds * Drain current limited by maximum junction temperature Thermal Characteristics FDPF18N50 / Symbol Parameter FDP18N50 Unit FDPF18N50T R Thermal Resistance, Junction-to-Case, Max. 0.53 3.3 °C/W θJC R Thermal Resistance, Case-to-Sink, Typ. 0.5 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient, Max. 62.5 62.5 °C/W θJA ©2012 1 FDP18N50 / FDPF18N50 / FDPF18N50T Rev. C1
