FDPF16N50 ,N-Channel UniFETTM MOSFET 500V, 16A, 380 m?Applications(PFC), flat panel display (FPD) TV power, ATX and electronic • LCD/LED/PDP TV lamp ball ..
FDPF16N50T ,N-Channel UniFETTM MOSFET 500V, 16A, 380 m?Applications(PFC), flat panel display (FPD) TV power, ATX and electronic • LCD/LED/PDP TV lamp ball ..
FDPF18N20FT ,N-Channel UniFETTM FRFET?MOSFET 200V, 18A, 140m?Features Description•R = 0.12Ω ( Typ.)@ V = 10V, I = 9A These N-Channel enhancement mode power fiel ..
FDPF18N50 ,N-Channel UniFETTM MOSFET 500V, 18A, 265m?Applications(PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.• LCD/LED/PD ..
FDPF18N50T ,N-Channel UniFETTM MOSFET 500V, 18A, 265m?Applications(PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.• LCD/LED/PD ..
FDPF20N50 ,N-Channel UniFETTM MOSFET 500V, 20A, 230m?Features Description• 20A, 500V, R = 0.23Ω @V = 10 V These N-Channel enhancement mode power field e ..
FQAF14N30 ,300V N-Channel MOSFET
FQAF15N70 ,700V N-Channel MOSFET
FQAF16N25 ,250V N-Channel MOSFET
FQAF17P10 ,100V P-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQAF19N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 11.2A, 600V, R = 0.38 Ω @ V = 10 VDS( ..
FQAF27N25 ,250V N-Channel MOSFET
FDPF16N50
N-Channel UniFETTM MOSFET 500V, 16A, 380 m?
TM FDP16N50 / FDPF16N50 / FDPF16N50T N-Channel UniFET MOSFET April 2013 FDP16N50 / FDPF16N50 / FDPF16N50T TM N-Channel UniFET MOSFET 500 V, 16 A, 380 mΩ Features Description TM ® • R = 380 mΩ (Max.) @ V = 10 V, I = 8 A UniFET MOSFET is Fairchild Semiconductor ’s high voltage D DS(on) GS MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 32 nC) This MOSFET is tailored to reduce on-state resistance, and to • Low Crss (Typ. 20 pF) provide better switching performance and higher avalanche • 100% Avalanche Tested energy strength. This device family is suitable for switching power converter applications such as power factor correction Applications (PFC), flat panel display (FPD) TV power, ATX and electronic • LCD/LED/PDP TV lamp ballasts. • Lighting • Uninterruptible Power Supply D G G G D D S S TO-220F TO-220 S Absolute Maximum Ratings FDPF16N50 / Symbol Parameter FDP16N50 Unit FDPF16N50T V Drain-Source Voltage 500 V DSS I Drain Current - Continuous (T = 25°C) 16 16 * A D C - Continuous (T = 100°C) 9.6 9.6 * A C (Note 1) I Drain Current - Pulsed 64 64 * A DM V Gate-Source voltage ±30 V GSS (Note 2) E Single Pulsed Avalanche Energy 780 mJ AS I Avalanche Current (Note 1) 16 A AR E Repetitive Avalanche Energy (Note 1) 20 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25°C) 200 38.5 W D C - Derate above 25°C 1.59 0.3 W/°C T T Operating and Storage Temperature Range -55 to +150 °C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 °C 1/8” from Case for 5 Seconds * Drain current limited by maximum junction temperature Thermal Characteristics FDPF16N50 / Symbol Parameter FDP16N50 Unit FDPF16N50T R Thermal Resistance, Junction-to-Case, Max. 0.63 3.3 °C/W θJC R Thermal Resistance, Case-to-Sink, Typ. 0.5 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient, Max. 62.5 62.5 °C/W θJA 1 ©2012 FDP16N50 / FDPF16N50 / FDPF16N50T Rev. C1
