FDPF10N50FT ,N-Channel UniFETTM FRFET?MOSFET 500V, 9A, 850m?ApplicationsThis device family is suitable for switching power converter appli-• LCD/ LED/ PDP TV c ..
FDPF12N50NZ ,N-Channel UniFETTM II MOSFET 500V, 11.5A, 520m?TMFDP12N50NZ / FDPF12N50NZ N-Channel UniFET II MOSFETMarch 2013FDP12N50NZ / FDPF12N50NZ ..
FdPF12N50t ,N-Channel UniFETTM MOSFET 500V, 11.5A, 650m?Features DescriptionTM ®•R = 550 m (Typ.) @ V = 10 V, I = 6 A UniFET MOSFET is Fairchild Semicond ..
FDPF12N50T ,N-Channel UniFETTM MOSFET 500V, 11.5A, 650m?Applications• LCD/LED/PDP TV• Lighting• Uninterruptible Power SupplyDGGGDTO-220 DTO-220FSSSoMOSFET ..
FDPF15N65 ,N-Channel UniFETTM MOSFET 650V, 15A, 440 m?Features DescriptionTM ®UniFET MOSFET is Fairchild Semiconductor ’s high voltage •R = 440 m (Max. ..
FDPF16N50 ,N-Channel UniFETTM MOSFET 500V, 16A, 380 m?Applications(PFC), flat panel display (FPD) TV power, ATX and electronic • LCD/LED/PDP TV lamp ball ..
FQA9N90 ,900V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 8.6A, 900V, R = 1.3Ω @V = 10 VDS(on) ..
FQA9N90C ,900V N-Channel Q-FETFQA9N90CTMQFETFQA9N90C900V N-Channel MOSFET
FQA9N90C_F109 ,N-Channel QFET?MOSFET 900V, 9.0A, 1.4?Features• 9 A, 900 V, R = 1.4 Ω (Max.) @ V = 10 V, I = 4.5 A This N-Channel enhancement mode power ..
FQAF10N80 ,800V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 6.7A, 800V, R = 1.05Ω @V = 10 VDS(on) ..
FQAF12P20 ,200V P-Channel MOSFETMay 2000TMQFET QFET QFET QFETFQAF12P20200V P-Channel MOSFET
FQAF13N50 ,500V N-Channel MOSFET
FDPF10N50FT
N-Channel UniFETTM FRFET?MOSFET 500V, 9A, 850m?
TM ® FDPF10N50FT N-Channel UniFET FRFET MOSFET March 2013 FDPF10N50FT TM ® N-Channel UniFET FRFET MOSFET 500 V, 9 A, 850 m Features Description TM ® •R = 710 m (Typ.) @ V = 10 V, I = 4.5 A UniFET MOSFET is Fairchild Semiconductor ’s high voltage DS(on) GS D MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge ( Typ. 18 nC) This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche • Low C ( Typ. 10 pF) rss energy strength. The body diode’s reverse recovery performance ® • 100% Avalanche Tested of UniFET FRFET MOSFET has been enhanced by lifetime control. Its t is less than 100nsec and the reverse dv/dt immu- rr • Improved dv/dt Capability nity is 15V/ns while normal planar MOSFETs have over 200nsec • RoHS Compliant and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. Applications This device family is suitable for switching power converter appli- • LCD/ LED/ PDP TV cations such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. • Lighting • Uninterruptible Power Supply D G G D TO-220F S S o MOSFET Maximum Ratings T = 25 C unless otherwise noted* C Symbol Parameter FDPF10N50FT Unit V Drain to Source Voltage 500 V DSS V Gate to Source Voltage ±30 V GSS o - Continuous (T = 25 C) 9* C I Drain Current A D o - Continuous (T = 100 C) 5.4* C I Drain Current - Pulsed (Note 1) 36* A DM E Single Pulsed Avalanche Energy (Note 2) 364 mJ AS I Avalanche Current (Note 1) 9 A AR E Repetitive Avalanche Energy (Note 1) 12.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns o (T = 25 C) 42 W C P Power Dissipation D o o - Derate above 25C0.33W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter Unit FDPF10N50FT R Thermal Resistance, Junction to Case 3.0 JC o C/W R Thermal Resistance, Junction to Ambient 62.5 JA 1 ©2009 FDPF10N50FT Rev. C0
