FDPF045N10A ,N-Channel PowerTrench?MOSFET 100V, 164A, 4.5m?Applications• High Power and Current Handling Capability• Synchronous Rectification for ATX / Serve ..
FDPF085N10A ,N-Channel PowerTrench?MOSFET 100V, 40A, 8.5m?ApplicationsRDS(on)• Consumer Appliances• High Power and Current Handling Capability•LED TV• RoHS C ..
FDPF10N50FT ,N-Channel UniFETTM FRFET?MOSFET 500V, 9A, 850m?ApplicationsThis device family is suitable for switching power converter appli-• LCD/ LED/ PDP TV c ..
FDPF12N50NZ ,N-Channel UniFETTM II MOSFET 500V, 11.5A, 520m?TMFDP12N50NZ / FDPF12N50NZ N-Channel UniFET II MOSFETMarch 2013FDP12N50NZ / FDPF12N50NZ ..
FdPF12N50t ,N-Channel UniFETTM MOSFET 500V, 11.5A, 650m?Features DescriptionTM ®•R = 550 m (Typ.) @ V = 10 V, I = 6 A UniFET MOSFET is Fairchild Semicond ..
FDPF12N50T ,N-Channel UniFETTM MOSFET 500V, 11.5A, 650m?Applications• LCD/LED/PDP TV• Lighting• Uninterruptible Power SupplyDGGGDTO-220 DTO-220FSSSoMOSFET ..
FQA8N90C ,900V N-Channel Q-FETFQA8N90CTMQFETFQA8N90C900V N-Channel MOSFET
FQA90N08 ,80V N-Channel MOSFETapplications such as automotive,high efficiency switching for DC/DC converters, and DCmotor control ..
FQA9N90 ,900V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 8.6A, 900V, R = 1.3Ω @V = 10 VDS(on) ..
FQA9N90C ,900V N-Channel Q-FETFQA9N90CTMQFETFQA9N90C900V N-Channel MOSFET
FQA9N90C_F109 ,N-Channel QFET?MOSFET 900V, 9.0A, 1.4?Features• 9 A, 900 V, R = 1.4 Ω (Max.) @ V = 10 V, I = 4.5 A This N-Channel enhancement mode power ..
FQAF10N80 ,800V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 6.7A, 800V, R = 1.05Ω @V = 10 VDS(on) ..
FDPF045N10A
N-Channel PowerTrench?MOSFET 100V, 164A, 4.5m?
® FDPF045N10A N-Channel PowerTrench MOSFET March 2013 FDPF045N10A ® N-Channel PowerTrench MOSFET 100 V, 164 A, 4.5 mΩ Features Description •R = 3.7 mΩ ( Typ.)@ V = 10 V, I = 67 A This N-Channel MOSFET is produced using Fairchild DS(on) GS D ® ® Semiconductor ’s advance PowerTrench process that has • Fast Switching Speed been tailored to minimize the on-state resistance while maintain- ing superior switching performance. • Low Gate Charge, Q = 57 nC(Typ.) G • High Performance Trench Technology for Extremely Low R DS(on) Applications • High Power and Current Handling Capability • Synchronous Rectification for ATX / Server / Telecom PSU •RoHS Compliant • Motor drives and Uninterruptible Power Supplies • Micro Solar Inverter D G G D TO-220F S S o MOSFET Maximum Ratings T = 25 C unless otherwise noted* C Symbol Parameter FDPF045N10A Unit V Drain to Source Voltage 100 V DSS V Gate to Source Voltage ±20 V GSS o - Continuous (T = 25 C) 67 C I Drain Current A D o - Continuous (T = 100 C) 47 C I Drain Current - Pulsed (Note 1) 268 A DM E Single Pulsed Avalanche Energy (Note 2) 637 mJ AS dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns o (T = 25 C) 43 W C P Power Dissipation D o o - Derate above 25C0.29W/ C o T , T Operating and Storage Temperature Range -55 to +175 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter FDPF045N10A Unit R Thermal Resistance, Junction to Case, Max. 3.5 θJC o C/W R Thermal Resistance, Junction to Ambient, Max. 62.5 θJA ©2011 1 FDPF045N10A Rev. C1
