FDP8896 ,30V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed specifically to r = 5.9mΩ , V = 10V, I = 35ADS(ON) ..
FDP8N50NZ ,N-Channel UniFETTM II MOSFET 500V, 8A, 850m?Applications• LCD/LED TV• Lighting• Uninterruptible Power Supply• AC-DC Power SupplyDDGGGGDDTO-220 ..
FDPF045N10A ,N-Channel PowerTrench?MOSFET 100V, 164A, 4.5m?Applications• High Power and Current Handling Capability• Synchronous Rectification for ATX / Serve ..
FDPF085N10A ,N-Channel PowerTrench?MOSFET 100V, 40A, 8.5m?ApplicationsRDS(on)• Consumer Appliances• High Power and Current Handling Capability•LED TV• RoHS C ..
FDPF10N50FT ,N-Channel UniFETTM FRFET?MOSFET 500V, 9A, 850m?ApplicationsThis device family is suitable for switching power converter appli-• LCD/ LED/ PDP TV c ..
FDPF12N50NZ ,N-Channel UniFETTM II MOSFET 500V, 11.5A, 520m?TMFDP12N50NZ / FDPF12N50NZ N-Channel UniFET II MOSFETMarch 2013FDP12N50NZ / FDPF12N50NZ ..
FQA8N80C ,800V N-Channel Advance Q-FET C-SeriesFQA8N80CTMQFETFQA8N80C800V N-Channel MOSFET
FQA8N90C ,900V N-Channel Q-FETFQA8N90CTMQFETFQA8N90C900V N-Channel MOSFET
FQA90N08 ,80V N-Channel MOSFETapplications such as automotive,high efficiency switching for DC/DC converters, and DCmotor control ..
FQA9N90 ,900V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 8.6A, 900V, R = 1.3Ω @V = 10 VDS(on) ..
FQA9N90C ,900V N-Channel Q-FETFQA9N90CTMQFETFQA9N90C900V N-Channel MOSFET
FQA9N90C_F109 ,N-Channel QFET?MOSFET 900V, 9.0A, 1.4?Features• 9 A, 900 V, R = 1.4 Ω (Max.) @ V = 10 V, I = 4.5 A This N-Channel enhancement mode power ..
FDP8896
30V N-Channel PowerTrench MOSFET
FDP8896 November 2004 FDP8896 ® N-Channel PowerTrench MOSFET 30V, 92A, 5.9mΩ General Description Features This N-Channel MOSFET has been designed specifically to r = 5.9mΩ, V = 10V, I = 35A DS(ON) GS D improve the overall efficiency of DC/DC converters using r = 7.0mΩ, V = 4.5V, I = 35A either synchronous or conventional switching PWM DS(ON) GS D controllers. It has been optimized for low gate charge, low High performance trench technology for extremely low r and fast switching speed. DS(ON) r DS(ON) Low gate charge Applications High power and current handling capability • DC/DC converters D DRAIN SOURCE (FLANGE) DRAIN GATE G TO-220AB S FDP SERIES MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DSS V Gate to Source Voltage ±20 V GS Drain Current o 92 A Continuous (T = 25 C, V = 10V) (Note 1) C GS o I Continuous (T = 25 C, V = 4.5V) (Note 1) 85 A D C GS o o Continuous (T = 25 C, V = 10V, with R = 62 C/W) 16 A amb GS θJA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 2) 74 mJ AS Power dissipation 80 W P D o o Derate above 25C0.53W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case TO-220 1.88 C/W θJC o R Thermal Resistance Junction to Ambient TO-220 ( Note 3) 62 C/W θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDP8896 FDP8896 TO-220AB Tube N/A 50 units FDP8896 FDP8896_NL (Note 4) TO-220AB Tube N/A 50 units ©2004 FDP8896 Rev. A1
