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FDP8860FAIRCHILN/a30avai30V N-Channel PowerTrench?MOSFET


FDP8860 ,30V N-Channel PowerTrench?MOSFETGeneral Description„ Max r = 2.5mΩ at V = 10V, I = 80AThis N-Channel MOSFET has been designed speci ..
FDP8870 ,30V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed specifically to r = 4.1mΩ , V = 10V, I = 35ADS(ON) ..
FDP8874 ,30V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed specifically to r = 5.3mΩ , V = 10V, I = 40ADS(ON) ..
FDP8876 ,30V N-Channel PowerTrench?MOSFETFeatures„ r = 8.5mΩ, V = 10V, I = 40ADS(ON) GS DThis N-Channel MOSFET has been designed specificall ..
FDP8876 ,30V N-Channel PowerTrench?MOSFET®FDP8876 N-Channel PowerTrench MOSFETNovember 2005FDP8876®N-Channel PowerTrench MOSFET 30V, 71A, 8. ..
FDP8880 ,30V N-Channel PowerTrench MOSFETApplications

FDP8860
30V N-Channel PowerTrench?MOSFET
® FDP8860 N-Channel PowerTrench MOSFET September 2006 FDP8860 ® tm N-Channel PowerTrench MOSFET 30V, 80A, 2.5mΩ Features General Description „ Max r = 2.5mΩ at V = 10V, I = 80A This N-Channel MOSFET has been designed specifically to DS(on) GS D improve the overall efficiency of DC/DC converters using either „ Max r = 2.9mΩ at V = 4.5V, I = 80A DS(on) GS D synchronous or conventional switching PWM controllers. It has „ Low Miller Charge been optimized for low gate charge, low r and fast DS(on) switching speed. „ Low Q Body Diode rr „ UIL Capability (Single Pulse and Repetitive Pulse) Application „ RoHS Compliant „ DC - DC Conversion „ Start / Alternator Sytems D G G TO -220 D FDP Series S S MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Package limited) T = 25°C 80 C I -Continuous (Silicon limited) T = 25°C 219 A D C -Pulsed (Note 1) 556 E Single Pulse Avalanche Energy (Note 2) 673 mJ AS P Power Dissipation 254 W D T , T Operating and Storage Temperature -55 to +175 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case TO220 0.59 θJC °C/W R Thermal Resistance, Junction to Ambient TO220 62 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDP8860 FDP8860 TO220AB Tube N/A 50 units 1 ©2006 FDP8860 Rev.B
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