FDP7030BLS ,30V N-Channel PowerTrench SyncFET TMFeatures This MOSFET is designed to replace a single MOSFET • 56 A, 30 V. R = 10.5 mΩ @ V = 10 V DS ..
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FDP75N08 , 75V N-Channel MOSFET
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FDP7030BLS
30V N-Channel PowerTrench SyncFET TM
FDP7030BLS/FDB7030BLS May 2001 FDP7030BLS / FDB7030BLS Ò ™ 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET · 56 A, 30 V. R = 10.5 mW @ V = 10 V DS(ON) GS and parallel Schottky diode in synchronous DC:DC R = 16.5 mW @ V = 4.5 V DS(ON) GS power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low · Includes SyncFET Schottky body diode R and low gate charge. The FDP7030BLS DS(ON) includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of · Low gate charge (15nC typical) the FDP7030BLS as the low-side switch in a synchronous rectifier is indistinguishable from the · High performance trench technology for extremely performance of the FDP7030BL in parallel with a low R and fast switching DS(ON) Schottky diode. · High power and current handling capability D D G G G S TO-263AB TO-220 D FDP Series FDB Series S S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage V GSS ±20 I Drain Current – Continuous (Note 1) D 56 A – Pulsed (Note 1) 160 P Total Power Dissipation @ T = 25°C W D 65 C Derate above 25°C 0.43 W/°C T , T °C J STG Operating and Storage Junction Temperature Range –65 to +100 T Maximum lead temperature for soldering purposes, L °C 275 1/8” from case for 5 seconds Thermal Characteristics R Thermal Resistance, Junction-to-Case 2.3 qJC °C/W R qJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDB7030BLS FDB7030BLS 13’’ 24mm 800 units FDP7030BLS FDP7030BLS Tube n/a 45 FDP7030BLS Rev B(W) Ó2001
