FDP6690S ,30V N-Channel PowerTrench SyncFET TMFeatures This MOSFET is designed to replace a single MOSFET • 21 A, 30 V. R = 15.5 mΩ @ V = 10 V DS ..
FDP7030 ,N-Channel Logic Level Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)CSymbol Parameter Conditions Min Typ Ma ..
FDP7030BL ,N-Channel Logic Level PowerTrench ?MOSFETGeneral Description
FDP7030BLS ,30V N-Channel PowerTrench SyncFET TMFeatures This MOSFET is designed to replace a single MOSFET • 56 A, 30 V. R = 10.5 mΩ @ V = 10 V DS ..
FDP7030L ,N-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral Description
FDP7042L ,N-Channel Logic Level PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 50 A, 30 V. R = 9 mΩ @ V = 4.5 V DS(ON) GSspecif ..
FQA44N30 ,300V N-Channel MOSFET
FQA44N30 ,300V N-Channel MOSFET
FQA55N10 ,100V N-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQA55N25 ,250V N-Channel MOSFET
FQA58N08 ,80V N-Channel MOSFETapplications such as automotive,high efficiency switching for DC/DC converters, and DCmotor control ..
FQA5N90 ,900V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 5.8A, 900V, R = 2.3 Ω @ V = 10 VDS(on ..
FDP6690S
30V N-Channel PowerTrench SyncFET TM
FDP6690S/FDB6690S SEPTEMBER 2001 FDP6690S/FDB6690S Ò ™ 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET · 21 A, 30 V. R = 15.5 mW @ V = 10 V DS(ON) GS and parallel Schottky diode in synchronous DC:DC R = 23.0 mW @ V = 4.5 V DS(ON) GS power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low · Includes SyncFET Schottky body diode R and low gate charge. The FDP6690S includes DS(ON) an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of · Low gate charge (11nC typical) the FDP6690S/FDB6690S as the low-side switch in a synchronous rectifier is indistinguishable from the · High performance trench technology for extremely performance of the FDP6035AL/FDB6035AL in parallel low R and fast switching DS(ON) with a Schottky diode. · High power and current handling capability D D G G G S TO-263AB TO-220 D FDP Series FDB Series S S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±20 V GSS I Drain Current – Continuous (Note 1) A D 42 – Pulsed (Note 1) 140 P Total Power Dissipation @ T = 25°C W D 48 C Derate above 25°C W/°C 0.5 T , T J STG Operating and Storage Junction Temperature Range –55 to +150 °C T Maximum lead temperature for soldering purposes, °C L 275 1/8” from case for 5 seconds Thermal Characteristics R Thermal Resistance, Junction-to-Case 2.6 qJC °C/W R qJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDB6690S FDB6690S 13’’ 24mm 800 units FDP6690S FDP6690S Tube n/a 45 FDP6690S/FDB6690S Rev C (W) Ó2001
