FDP6670S ,30V N-Channel PowerTrench SyncFET TMFeatures This MOSFET is designed to replace a single MOSFET • 31 A, 30 V. R = 8.5 mΩ @ V = 10 V DS( ..
FDP6676 ,30V N-Channel Logic Level PowerTrench MOSFETApplications • High performance trench technology for extremely low R DS(ON)• Synchronous rectifie ..
FDP6676 ,30V N-Channel Logic Level PowerTrench MOSFETFDP6676/FDB6676 April 2001 FDP6676/FDB6676 30V N-Channel Logic Level PowerTrench MOSFET
FDP6676 ,30V N-Channel Logic Level PowerTrench MOSFETApplications • High performance trench technology for extremely low R DS(ON)• Synchronous rectifie ..
FDP6676 ,30V N-Channel Logic Level PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 42 A, 30 V. R = 6.0 mΩ @ V = 10 V DS(ON) GSspec ..
FDP6676S ,30V N-Channel PowerTrench SyncFET TMFDP6676S/FDB6676S October 2001 FDP6676S / FDB6676S ™30V N-Channel PowerTrench SyncFET
FQA44N08 ,80V N-Channel MOSFETapplications such as automotive, highefficiency switching for DC/DC converters, and DC motorcontrol ..
FQA44N10 ,100V N-Channel MOSFETapplications such as audioamplifiers, high efficiency switching DC/DC converters, andDC motor contr ..
FQA44N30 ,300V N-Channel MOSFET
FQA44N30 ,300V N-Channel MOSFET
FQA44N30 ,300V N-Channel MOSFET
FQA55N10 ,100V N-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FDP6670S
30V N-Channel PowerTrench SyncFET TM
FDP6670S/FDB6670S September 2001 FDP6670S/FDB6670S Ò ™ 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET · 31 A, 30 V. R = 8.5 mW @ V = 10 V DS(ON) GS and parallel Schottky diode in synchronous DC:DC R = 12.5 mW @ V = 4.5 V DS(ON) GS power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low · Includes SyncFET Schottky body diode R and low gate charge. The FDP6670S includes DS(ON) an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of · Low gate charge (23nC typical) the FDP6670S/FDB6670S as the low-side switch in a synchronous rectifier is indistinguishable from the · High performance trench technology for extremely performance of the FDP6670A/FDB6670A in parallel low R and fast switching DS(ON) with a Schottky diode. · High power and current handling capability D D G G G S TO-263AB TO-220 D FDP Series FDB Series S S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±20 V GSS I Drain Current – Continuous (Note 1) A D 62 – Pulsed (Note 1) 150 P Total Power Dissipation @ T = 25°C W D 62.5 C Derate above 25°C W/°C 0.5 T , T J STG Operating and Storage Junction Temperature Range –55 to +150 °C T Maximum lead temperature for soldering purposes, °C L 275 1/8” from case for 5 seconds Thermal Characteristics R Thermal Resistance, Junction-to-Case 2.1 qJC °C/W R qJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDB6670S FDB6670S 13’’ 24mm 800 units FDP6670S FDP6670S Tube n/a 45 FDP6670S/FDB6670S Rev E(W) Ó2001
