FDP6670AL ,N-Channel Logic Level PowerTrench TM MOSFETGeneral Description
FDP6670AL. ,N-Channel Logic Level PowerTrench TM MOSFETElectrical Characteristics (T = 25°C unless otherwise noted)CSymbol Parameter Conditions Min Typ Ma ..
FDP6670S ,30V N-Channel PowerTrench SyncFET TMFeatures This MOSFET is designed to replace a single MOSFET • 31 A, 30 V. R = 8.5 mΩ @ V = 10 V DS( ..
FDP6676 ,30V N-Channel Logic Level PowerTrench MOSFETApplications • High performance trench technology for extremely low R DS(ON)• Synchronous rectifie ..
FDP6676 ,30V N-Channel Logic Level PowerTrench MOSFETFDP6676/FDB6676 April 2001 FDP6676/FDB6676 30V N-Channel Logic Level PowerTrench MOSFET
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FQA34N25 ,250V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 34A, 250V, R = 0.085Ω @V = 10 VDS(on) ..
FQA36P15 ,150V P-Channel QFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQA44N08 ,80V N-Channel MOSFETapplications such as automotive, highefficiency switching for DC/DC converters, and DC motorcontrol ..
FQA44N10 ,100V N-Channel MOSFETapplications such as audioamplifiers, high efficiency switching DC/DC converters, andDC motor contr ..
FQA44N30 ,300V N-Channel MOSFET
FQA44N30 ,300V N-Channel MOSFET
FDP6670AL-FDP6670AL.
N-Channel Logic Level PowerTrench TM MOSFET
July 1998 FDP6670AL/FDB6670AL TM N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed 80 A, 30 V. R = 0.0065 W @ V =10 V, DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 0.0085 W @ V = 4.5 V. DS(ON) GS converters using either synchronous or conventional Critical DC electrical parameters specified at elevated switching PWM controllers. temperature. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R Rugged internal source-drain diode can eliminate the need DS(on) specifications. for an external Zener diode transient suppressor. The result is a MOSFET that is easy and safer to drive (even High performance trench technology for extremely low at very high frequencies), and DC/DC power supply designs R . DS(ON) with higher overall efficiency. 175°C maximum junction temperature rating. _________________________________________________________________________________ D G S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FDP6670AL FDB6670AL Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±20 V GSS I Drain Current - Continuous (Note 1) 80 A D - Pulsed (Note 1) 240 P Total Power Dissipation @ T = 25°C 75 W D C Derate above 25°C 0.5 W/°C T ,T Operating and Storage Temperature Range -65 to 175 °C J STG T Maximum lead temperature for soldering purposes, 275 °C L 1/8" from case for 5 seconds THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Case 2 °C/W JC q Thermal Resistance, Junction-to-Ambient 62.5 °C/W R JA q FDP6670AL Rev.C © 1998
