FDP61N20 ,N-Channel UniFETTM MOSFET 200V, 61A, 41m?Applicationslamp ballasts.•PDP TV• Lighting• Uninterruptible Power Supply• AC-DC Power SupplyD ..
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FDP6670S ,30V N-Channel PowerTrench SyncFET TMFeatures This MOSFET is designed to replace a single MOSFET • 31 A, 30 V. R = 8.5 mΩ @ V = 10 V DS( ..
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FQA34N20L ,200V LOGIC N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 34A, 200V, R = 0.075Ω @V = 10 VDS(on) ..
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FQA36P15 ,150V P-Channel QFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
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FQA44N30 ,300V N-Channel MOSFET
FDP61N20
N-Channel UniFETTM MOSFET 200V, 61A, 41m?
TM FDP61N20 N-Channel UniFET MOSFET March 2013 FDP61N20 TM N-Channel UniFET MOSFET 200 V, 61 A, 41 m Features Description TM ® UniFET MOSFET is Fairchild Semiconductor ’s high voltage •R = 41 m (Max.) @ V = 10 V, ID = 30.5 A DS(on) GS MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 58 nC) This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche •Low C (Typ. 80 pF) rss energy strength. This device family is suitable for switching • 100% Avalanche Tested power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic Applications lamp ballasts. •PDP TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supply D G G D TO-220 S S Absolute Maximum Ratings Symbol Parameter FDP61N20 Unit V Drain-Source Voltage 200 V DSS I Drain Current - Continuous (T = 25C) 61 A D C - Continuous (T = 100C) 38.5 A C (Note 1) I Drain Current - Pulsed 244 A DM V Gate-Source voltage 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 1440 mJ AS I Avalanche Current (Note 1) 61 A AR E Repetitive Avalanche Energy (Note 1) 41.7 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25C) 417 W D C - Derate above 25C 3.3 W/C T T Operating and Storage Temperature Range -55 to +150 C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 C 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter FDP61N20 Unit R Thermal Resistance, Junction-to-Case, Max. 0.3 JC C/W R Thermal Resistance, Junction-to-Ambient, Max. 62.5 JA ©2005 1 FDP61N20 Rev. C0
