FDP6035AL ,N-Channel Logic Level PowerTrench TM MOSFETJuly 1998 FDP6035AL/FDB6035AL TM N-Channel Logic Level PowerTrench MOSFET
FDP6035AL. ,N-Channel Logic Level PowerTrench TM MOSFETGeneral Description
FDP6035L ,N-Channel Logic Level Enhancement Mode Field Effect TransistorElectrical Characteristics T = 25°C unless otherwise noted)CSymbol Parameter Conditions Min Typ Ma ..
FDP603AL ,N-Channel Logic Level Enhancement Mode Field Effect TransistorElectrical Characteristics T = 25°C unless otherwise noted)CSymbol Parameter Conditions Min Typ Ma ..
FDP61N20 ,N-Channel UniFETTM MOSFET 200V, 61A, 41m?Applicationslamp ballasts.•PDP TV• Lighting• Uninterruptible Power Supply• AC-DC Power SupplyD ..
FDP6670AL ,N-Channel Logic Level PowerTrench TM MOSFETGeneral Description
FQA30N40 ,400V N-Channel MOSFET
FQA32N20C ,200V N-Channel Advance Q-FET C-SeriesFQA32N20C®QFETFQA32N20C200V N-Channel MOSFET
FQA33N10 ,100V N-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQA33N10L ,100V LOGIC N-Channel MOSFETapplications such as high efficiencyswitching DC/DC converters, and DC motor control.D! !""!!""""G! ..
FQA34N20 ,200V N-Channel MOSFET
FQA34N20 ,200V N-Channel MOSFET
FDP6035AL-FDP6035AL.
N-Channel Logic Level PowerTrench TM MOSFET
July 1998 FDP6035AL/FDB6035AL TM N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed 48A, 30 V. R = 0.0125 W @ V = 10 V, DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 0.017 W @ V = 4.5 V. DS(ON) GS converters using either synchronous or conventional Critical DC electrical parameters specified at elevated switching PWM controllers. temperature. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R Rugged internal source-drain diode can eliminate the need DS(on) specifications. for an external Zener diode transient suppressor. The result is a MOSFET that is easy and safer to drive (even High performance trench technology for extremely low at very high frequencies), and DC/DC power supply designs R . DS(ON) with higher overall efficiency. 175°C maximum junction temperature rating. _________________________________________________________________________________ D G S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FDP6035AL FDB6035AL Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±20 V GSS Drain Current - Continuous (Note 1) 48 A I D - Pulsed (Note 1) 150 P Total Power Dissipation @ T = 25°C 58 W D C Derate above 25°C 0.4 W/°C T ,T Operating and Storage Temperature Range -65 to 175 °C J STG T Maximum lead temperature for soldering purposes, 1/8" 275 °C L from case for 5 seconds THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Case 2.6 °C/W qJC Thermal Resistance, Junction-to-Ambient 62.5 °C/W R JA q FDP6035AL Rev.C © 1998
