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FDP5645
60V N-Channel PowerTrench ?MOSFET
FDP5645/FDB5645 March 2000 FDP5645/FDB5645 ® 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed · 80 A, 60 V. R = 0.0095 W @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 0.011 W @ V = 6 V. DS(ON) GS converters using either synchronous or conventional switching PWM controllers. · Critical DC electrical parameters specified at elevated temperature. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable · Rugged internal source-drain diode can eliminate the R specifications. DS(ON) need for an external Zener diode transient suppressor. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power · High performance trench technology for extremely supply designs with higher overall efficiency. low R . DS(ON) · 175°C maximum junction temperature rating. D D G G G S TO-263AB TO-220 D FDP Series FDB Series S S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter FDP5645 FDB5645 Units V Drain-Source Voltage 60 V DSS V Gate-Source Voltage V GSS ±20 I Maximum Drain Current – Continuous (note 3) 80 A D – Pulsed 300 PD Total Power Dissipation @ T = 25°C 125 W C 0.83 Derate above 25°C W/°C TJ, TSTG Operating and Storage Junction Temperature Range -65 to +175 °C T Maximum lead termperature for soldering purposes, +275 L °C 1/8“ from case for 5 seconds Thermal Characteristics R Thermal Resistance, Junction-to-Case 1.2 °C/W qJC R Thermal Resistance, Junction-to-Ambient 62.5 °C/W qJA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDB5645 FDB5645 13” 24mm 800 units note 2 FDP5645 FDP5645 Ó 2000 FDP5645/FDB5645 Rev B (W)
