FDP52N20 ,N-Channel UniFETTM MOSFET 200V, 52A, 49m?Features DescriptionTM ®• UniFET MOSFET is Fairchild Semiconductor ’s high voltage I = 41 mΩ ( Typ ..
FDP52N20 ,N-Channel UniFETTM MOSFET 200V, 52A, 49m?Applications• PDP TV• Lighting• Uninterruptible Power Supply• AC-DC Power SupplyDGGDD GSSTO-220FTO- ..
FDP5500 , N-Channel UltraFET Power MOSFET 55V, 80A, 7mΩ
FDP55N06 ,N-Channel UniFETTM MOSFET 60V, 55A, 22m?Features Description• 55A, 60V, R = 0.022 Ω @V = 10 V These N-Channel enhancement mode power field ..
FDP55N06 ,N-Channel UniFETTM MOSFET 60V, 55A, 22m?FDP55N06/FDPF55N06 60V N-Channel MOSFETTMUniFETFDP55N06/FDPF55N0660V N-Channel MOSFET
FDP5645 ,60V N-Channel PowerTrench ?MOSFETFeaturesThis N-Channel MOSFET has been designed• 80 A, 60 V. R = 0.0095 Ω @ V = 10 VDS(ON) GSspecif ..
FQA22P10 ,100V P-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQA24N50F ,500V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 24A, 500V, R = 0.2Ω @V = 10 VDS(on) G ..
FQA24N50F ,500V N-Channel MOSFETFQA24N50FSeptember 2001TMFRFETFQA24N50F500V N-Channel MOSFET
FQA24N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 23.5A, 600V, R = 0.24 Ω @ V = 10 VDS( ..
FQA24N60 ,600V N-Channel MOSFETApril 2000TMQFET QFET QFET QFETFQA24N60600V N-Channel MOSFET
FQA26N30 ,300V N-Channel MOSFET
FDP52N20
N-Channel UniFETTM MOSFET 200V, 52A, 49m?
TM FDP52N20 / FDPF52N20T N-Channel UniFET MOSFET April 2013 FDP52N20 / FDPF52N20T TM N-Channel UniFET MOSFET 200 V, 52 A, 49 mΩ Features Description TM ® • UniFET MOSFET is Fairchild Semiconductor ’s high voltage I = 41 mΩ ( Typ.) @ V = 10 V, I = 26 A DS(on) GS D MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 49 nC) This MOSFET is tailored to reduce on-state resistance, and to • Low C ( Typ. 66 pF) rss provide better switching performance and higher avalanche • 100% Avalanche Tested energy strength. This device family is suitable for switching power converter applications such as power factor correction • RoHS Compliant (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. Applications • PDP TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supply D G G D D G S S TO-220F TO-220 S o MOSFET Maximum Ratings T = 25 C unless otherwise noted C Symbol Parameter FDP52N20 FDPF52N20T Unit V Drain to Source Voltage 200 V DSS V Gate to Source Voltage ±30 V GSS o -Continuous (T = 25 C) 52 52* C I Drain Current A D o -Continuous (T = 100 C) 33 33* C I Drain Current - Pulsed (Note 1) 208 208* A DM E Single Pulsed Avalanche Energy (Note 2) 2520 mJ AS I Avalanche Current (Note 1) 52 A AR E Repetitive Avalanche Energy (Note 1) 35.7 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns o (T = 25 C) 357 38.5 W C P Power Dissipation D o o - Derate above 25 C 2.86 0.3 W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDP52N20 FDPF52N20T Unit R Thermal Resistance, Junction to Case, Max. 0.35 3.3 θJC o R Thermal Resistance, Case to Sink, Typ. 0.5 - C/W θCS R Thermal Resistance, Junction to Ambient, Max. 62.5 62.5 θJA ©2007 1 FDP52N20 / FDPF52N20T Rev. C0
