FDP46N30 ,300V N-Channel MOSFETFeatures Description• 46A, 300V, R = 0.079Ω @V = 10 V These N-Channel enhancement mode power field ..
FDP51N25 ,N-Channel UniFETTM MOSFET 250V, 51A, 60m?Features DescriptionTM ®UniFET MOSFET is Fairchild Semiconductor ’s high voltage •R = 60 m (Max.) ..
FDP51N25 ,N-Channel UniFETTM MOSFET 250V, 51A, 60m?applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and elec ..
FDP52N20 ,N-Channel UniFETTM MOSFET 200V, 52A, 49m?Features DescriptionTM ®• UniFET MOSFET is Fairchild Semiconductor ’s high voltage I = 41 mΩ ( Typ ..
FDP52N20 ,N-Channel UniFETTM MOSFET 200V, 52A, 49m?Applications• PDP TV• Lighting• Uninterruptible Power Supply• AC-DC Power SupplyDGGDD GSSTO-220FTO- ..
FDP5500 , N-Channel UltraFET Power MOSFET 55V, 80A, 7mΩ
FQA22N30 ,300V N-Channel MOSFET
FQA22P10 ,100V P-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQA24N50F ,500V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 24A, 500V, R = 0.2Ω @V = 10 VDS(on) G ..
FQA24N50F ,500V N-Channel MOSFETFQA24N50FSeptember 2001TMFRFETFQA24N50F500V N-Channel MOSFET
FQA24N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 23.5A, 600V, R = 0.24 Ω @ V = 10 VDS( ..
FQA24N60 ,600V N-Channel MOSFETApril 2000TMQFET QFET QFET QFETFQA24N60600V N-Channel MOSFET
FDP46N30
300V N-Channel MOSFET
FDP46N30 300V N-Channel MOSFET August 2005 TM UniFET FDP46N30 300V N-Channel MOSFET Features Description • 46A, 300V, R = 0.079Ω @V = 10 V These N-Channel enhancement mode power field effect transis- DS(on) GS tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge (typical 58 nC) DMOS technology. • Low C (typical 60 pF) rss This advanced technology has been especially tailored to mini- • Fast switching mize on-state resistance, provide superior switching perfor- mance, and withstand high energy pulse in the avalanche and • 100% avalanche tested commutation mode. These devices are well suited for high effi- • Improved dv/dt capability cient switched mode power supplies and active power factor correction. D {{ zz zz {{ G zz TO-220 G D S {{ FDP Series S Absolute Maximum Ratings Symbol Parameter FDP46N30 Unit V Drain-Source Voltage 300 V DSS I Drain Current - Continuous (T = 25°C) 46 A D C - Continuous (T = 100°C) 27.6 A C (Note 1) I Drain Current - Pulsed 184 A DM V Gate-Source voltage ±30 V GSS (Note 2) E Single Pulsed Avalanche Energy 1205 mJ AS (Note 1) I Avalanche Current 46 A AR (Note 1) E Repetitive Avalanche Energy 41.7 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt 4.5 V/ns P Power Dissipation (T = 25°C) 417 W D C - Derate above 25°C 3.3 W/°C T T Operating and Storage Temperature Range -55 to +150 °C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 °C 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter Min. Max. Unit R Thermal Resistance, Junction-to-Case -- 0.30 °C/W θJC R Thermal Resistance, Case-to-Sink 0.5 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA ©2005 1 FDP46N30 Rev. A
